Achieving time-of-flight mobilities for amorphous organic semiconductors in a thin film transistor configuration

Organic Electronics

Volumn 14, Issue 5, 2013, Pages 1351-1358

  Chan, Cyrus Y H ^a   Tsung, K K ^a   Choi, W H ^a   So, S K ^a  

^a HONG KONG BAPTIST UNIVERSITY   (Hong Kong)

Author keywords

Gate dielectrics; Interfacial dipoles; Thin film transistor; Time of flight

Indexed keywords

AMORPHOUS FILMS; DIELECTRIC MATERIALS; HOLE MOBILITY; LOW-K DIELECTRIC; ORGANIC LIGHT EMITTING DIODES (OLED); POLYMERS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICA; TEMPERATURE DISTRIBUTION; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS;

DIELECTRIC SURFACE; GATE DIELECTRIC LAYERS; GAUSSIAN DISORDER MODELS; INTERFACIAL DIPOLES; ORDERS OF MAGNITUDE; TEMPERATURE DEPENDENCE; TIME OF FLIGHT; TIME-OF-FLIGHT TECHNIQUES;

GATE DIELECTRICS;

EID: 84875400897     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2013.02.007     Document Type: Article

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