Using thin film transistors to quantify carrier transport properties of amorphous organic semiconductors

Applied Physics Letters

Volumn 93, Issue 8, 2008, Pages

  Cheung, C H ^a   Tsung, K K ^a   Kwok, K C ^a   So, S K ^a  

^a HONG KONG BAPTIST UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AMINES; AMORPHOUS MATERIALS; ARSENIC COMPOUNDS; GATE DIELECTRICS; GATES (TRANSISTOR); SEMICONDUCTING ORGANIC COMPOUNDS; THICK FILMS; THIN FILM TRANSISTORS; THIN FILMS; TRANSPORT PROPERTIES; TUNGSTEN;

CARRIER TRANSPORT PROPERTIES; HOLE TRANSPORTING; ORGANIC SEMICONDUCTORS; THIN-FILM TRANSISTOR TFT); TIME-OF-FLIGHT TECHNIQUES;

TRANSISTORS;

EID: 51349133063     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2972125     Document Type: Article

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