Determination of carrier mobility in phenylamine by time-of-flight, dark-injection, and thin film transistor techniques

Journal of Applied Physics

Volumn 103, Issue 9, 2008, Pages

  Cheung, C H ^a   Kwok, K C ^a   Tse, S C ^a   So, S K ^a  

^a HONG KONG BAPTIST UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANILINE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; OHMIC CONTACTS; THIN FILM TRANSISTORS;

DARK INJECTION; INJECTING ELECTRODES; INJECTION CONTACTS; TRANSIENT PEAKS;

CARRIER MOBILITY;

EID: 43949125524     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2909904     Document Type: Article

References (23)

1. C. W. Tang and S. A. VanSlyke, Appl. Phys. Lett. 0003-6951 10.1063/1.98805 51, 913 (1987).
2. P. Peumans, A. Yakimov, and S. R. Forrest, J. Appl. Phys. 0021-8979 10.1063/1.1534621 93, 3693 (2003).
3. G. Horowitz, J. Mater. Res. 0884-2914 10.1557/JMR.2004.0266 19, 1946 (2004).
4. P. W. M. Blom and M. C. J. M. Vissenberg, Mater. Sci. Eng., R. 0927-796X 10.1016/S0927-796X(00)00009-7 27, 53 (2000).
5. S. W. Liu, J. H. Lee, C. C. Lee, C. T. Chen, and J. K. Wang, Appl. Phys. Lett. 0003-6951 10.1063/1.2787890 91, 142106 (2007).
6. S. C. Tse, K. C. Kwok, and S. K. So, Appl. Phys. Lett. 0003-6951 10.1063/1.2420785 89, 262102 (2006).
7. S. K. So, S. C. Tse, and K. L. Tong, J. Disp. Technol. 1551-319X 10.1109/JDT.2007.895342 3, 225 (2007).
8. P. M. Borsenberger and D. S. Weiss, Organic Photoreceptors for Imaging Systems (Dekker, New York, 1993), Chap..
9. S. C. Tse, S. W. Tsang, and S. K. So, J. Appl. Phys. 0021-8979 10.1063/1.2348640 100, 063708 (2006).
10. J. Lee, K. Kim, J. H. Kim, S. Im, and D. Y. Jung, Appl. Phys. Lett. 0003-6951 10.1063/1.1580993 82, 4169 (2003).
11. M. Kitamura, T. Imada, S. Kako, and Y. Arakawa, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.43.2326 43, 2326 (2004).
12. Y. Shirota and H. Kageyama, Chem. Rev. (Washington, D.C.) 0009-2665 10.1021/cr050143+ 107, 953 (2007).
13. S. K. So, W. K. Choi, C. H. Cheng, L. M. Leung, and C. F. Kwong, Appl. Phys. A: Mater. Sci. Process. 0947-8396 10.1007/s003390050921 68, 447 (1999).
14. P. N. Murgatroyd, J. Phys. D 0022-3727 10.1088/0022-3727/3/2/308 3, 151 (1970).
15. W. Osikowicz, M. P. de Jong, S. Braun, C. Tengstedt, M. Fahlman, and W. R. Salaneck, Appl. Phys. Lett. 0003-6951 10.1063/1.2201627 88, 193504 (2006).
16. T. Manaka, E. Lim, R. Tamura, and M. Iwamoto, Thin Solid Films 0040-6090 10.1016/j.tsf.2005.07.015 499, 386 (2006).
17. D. E. King, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.579869 13, 1247 (1995).
18. S. Rentenberger, A. Vollmer, E. Zojer, R. Schennach, and N. Kock, J. Appl. Phys. 0021-8979 10.1063/1.2336345 100, 053701 (2006).
19. M. A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970); K. C. Kao and W. Hwang, Electrical Transport in Solids (Pergamon, Oxford, 1981).
20. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
21. T. P. I. Saragi, T. F. Lieker, and J. Salbeck, Adv. Funct. Mater. 1616-301X 10.1002/adfm.200500361 16, 966 (2006).
22. J. Veres, S. D. Ogier, S. W. Leeming, and D. C. Cupertino, Adv. Funct. Mater. 1616-301X 10.1002/adfm.200390030 13, 199 (2003).
23. H. Bässler, Phys. Status Solidi B 0370-1972 10.1002/pssb.2221750102 175, 15 (1993).