Micro-ultracapacitors with highly doped silicon nanowires electrodes

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-5

  Thissandier, Fleur ^a,c   Pauc, Nicolas ^c   Brousse, Thierry ^c,d   Gentile, Pascal ^b,c   Sadki, Saïd ^a,c  

^a Departement de Recherches Fondamentales sur la Matiere Condensee CEA Grenoble   (France)

^b UNIV GRENOBLE ALPES   (France)

^c CEA GRENOBLE   (France)

^d UNIVERSITÉ DE NANTES   (France)

Author keywords

Chemical vapor deposition; Cyclic voltammetry; Electrochemical capacitor; Galvanostatic charge discharge; Microdevice; Silicon nanowires electrodes; Ultracapacitor

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; CYCLIC VOLTAMMETRY; DOPING (ADDITIVES); ELECTROLYTES; LAND VEHICLE PROPULSION; NANOWIRES; SILICON; SUBSTRATES; SUPERCAPACITOR;

CAPACITIVE BEHAVIOR; ELECTROCHEMICAL CAPACITOR; GALVANOSTATIC CHARGE/DISCHARGE; MAXIMUM POWER DENSITY; MICRO-DEVICE; NANOSTRUCTURED SILICON; ORGANIC ELECTROLYTE; SILICON NANOWIRES;

ELECTROCHEMICAL ELECTRODES;

EID: 84875187568     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-38     Document Type: Article

References (22)

1. Simon P, Gogotsi Y: Materials for electrochemical capacitors. Nat Mater 2008, 7:845-854.
2. Aricò AS, Bruce P, Scrosati B, Tarascon J-M, Van Schalkwijk W: Nanostructured materials for advanced energy conversion and storage devices. Nat Mater 2005, 4:366-377.
3. Miller JR, Simon P: Electrochemical capacitors for energy management. Science 2008, 321:651-652.
4. Rogers JA, Huang Y: A curvy, stretchy future for electronics. Proc Nat Acad Sci USA 2009, 106:10875-10876.
5. Kaempgen M, Chan CK, Ma J, Cui Y, Gruner G: Printable thin film supercapacitors using single-walled carbon nanotubes. Nano Lett 2009, 9:1872-1876.
6. Chmiola J, Largeot C, Taberna P-L, Simon P, Gogotsi Y: Monolithic carbide-derived carbon films for micro-supercapacitors. Science 2010, 328:480-483.
7. Pech D, Brunet M, Durou H, Huang P, Mochalin V, Gogotsi Y, Taberna PL, Simon P: Ultrahigh-power micrometre-sized supercapacitors based on onion-like carbon. Nat Nanotechnol 2010, 5:651-654.
8. Kim HK, Seong TY, Lee SM, Yoon YS: Charge-discharge induced phase transformation of RuO 2 electrode for thin film supercapacitor. Met Mater Int 2003, 9:239-246.
9. Moser F, Athouel L, Crosnier O, Favier F, Bélanger D, Brousse T: Transparent electrochemical capacitor based on electrodeposited MnO2 thin film electrodes and gel-type electrolyte. Electrochem Comm 2009, 11:1259-1261.
10. Choi JW, McDonough J, Jeong S, Yoo JS, Chan CK, Cui Y: Stepwise nanopore evolution in one-dimensional nanostructures. Nano Lett 2010, 10:1409-1413.
11. Rowlands SE, Latham RJ: Supercapacitor devices using porous silicon electrodes. Ionics 1999, 5:144-149.
12. Desplobain S, Gautier G, Semai J, Ventura L, Roy M: Investigations on porous silicon as electrode material in electrochemical capacitors. Phys Stat Sol (C) 2007, 4:2180-2184.
13. Lu F, Qiu M, Qi X, Yang L, Yin J, Hao G, Feng X, Li J, Zhang J: Electrochemical properties of high-power supercapacitors using ordered NiO coated Si nanowire array electrodes. Appl Phys A 2011, 104:545-550.
14. Tao B, Zhang J, Miao F, Hui S, Wan L: Preparation and electrochemistry of NiO/SiNW nanocomposite electrodes for electrochemical capacitors. Electrochim Acta 2010, 55:5258-5262.
15. Alper JP, Vincent M, Carraro C, Maboudian R: Silicon carbide coated silicon nanowires as robust electrode material for aqueous micro-supercapacitor. Appl Phys Lett 2012, 100:163901.
16. Thissandier F, Le Comte A, Crosnier O, Gentile P, Bidan G, Hadji E, Brousse T, Sadki S: Highly doped silicon nanowires based electrodes for microelectrochemical capacitors application. Electrochem Comm 2012, 25:109-111.
17. Wagner RS, Ellis WC: Vapor-liquid-solid mechanism of single crystal growth. Phys Lett 1964, 4:89-90.
18. Morales AM, Lieber CM: A laser ablation method for the synthesis of crystalline semiconductor nanowires. Science 1998, 279:208-211.
19. Oehler F, Gentile P, Baron T, Ferret P: The effects of HCl on silicon nanowire growth: surface chlorination and existence of a "diffusionlimited minimum diameter". Nanotechnology 2009, 20:475307.
20. Oehler F, Gentile P, Baron T, Ferret P, Den Hertog M, Rouvière J: The importance of the radial growth in the faceting of silicon nanowires. Nano Lett 2010, 10:2335-2341.
21. Gentile P, Solanki A, Pauc N, Oehler F, Salem B, Rosaz G, Baron T, Den Hertog M, Calvo V: Effect of HCl on the doping and shape control of silicon nanowires. Nanotechnol 2012, 23:215702.
22. Rosaz G, Salem B, Pauc N, Gentile P, Potié A, Baron T: High-performance silicon nanowire field-effect transistor with silicided contacts. Semicond Sci Technol 2011, 26:085020.