Factors limiting the doping efficiency of transparent conductors: A case study of Nb-doped In2O3 epitaxial thin-films

Solar Energy Materials and Solar Cells

Volumn 113, Issue , 2013, Pages 171-178

  Lozano, O ^a,b   Chen, Q Y ^a,b   Wadekar, P V ^a,b   Seo, H W ^c   Chinta, P V ^a,b   Chu, L H ^a   Tu, L W ^b   Lo, Ikai ^b   Yeh, S W ^b   Ho, N J ^b   Chuang, F C ^b   Jang, D J ^b   Wijesundera, D ^a   Chu, Wei Kan ^a  

^a University of Houston   (United States)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c UNIVERSITY OF ARKANSAS AT LITTLE ROCK   (United States)

Author keywords

Epitaxial thin film; Highly transparent; Indium oxide; Niobium doping; Transparent conducting oxide

Indexed keywords

EPITAXIAL THIN FILMS; HIGHLY TRANSPARENT; INDIUM OXIDE; NIOBIUM DOPING; TRANSPARENT CONDUCTING OXIDE;

ATOMS; BINDING ENERGY; DEPOSITS; EPITAXIAL FILMS; EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NIOBIUM OXIDE; PLASMA OSCILLATIONS; TIN;

SEMICONDUCTOR DOPING;

EID: 84875186150     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.02.006     Document Type: Article

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