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Volumn 113, Issue 10, 2013, Pages

Laser direct writing of GaN-based light-emitting diodes-The suitable laser source for mesa definition

(8) Moser, Rüdiger a Goler, Christian a Kunzer, Michael a Köhler, Klaus a Pletschen, Wilfried a Brunne, Jens b Schwarz, Ulrich T a,b Wagner, Joachim a

a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF (Germany)

b UNIVERSITY OF FREIBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIONAL ANNEALING; BAND FILLING EFFECTS; COMPARATIVE STUDIES; CONTACT METALLIZATION; DEFECT LUMINESCENCE; GAN-BASED LIGHT-EMITTING DIODES; LASER DIRECT WRITING; MORPHOLOGICAL PROPERTIES;

CRACKS; CRYSTAL DEFECTS; EPITAXIAL GROWTH; EXCIMER LASERS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; LASER ABLATION; LASER BEAM EFFECTS; LASER PULSES; LEAKAGE CURRENTS; PHOTOLITHOGRAPHY; QUANTUM WELL LASERS; RAPID PROTOTYPING; WET ETCHING;

LIGHT EMITTING DIODES;

EID: 84875167585 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4794844 Document Type: Article

Times cited : (7)

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