Optical properties of extended and localized states in m-plane InGaN quantum wells

Applied Physics Letters

Volumn 102, Issue 10, 2013, Pages

  Marcinkevicius S ^a   Kelchner, K M ^b   Nakamura, S ^b   Denbaars, S P ^b   Speck, J S ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HOLE LEVELS; INGAN QUANTUM WELLS; LOCALIZED STATE; M-PLANE; NEAR-FIELD; PHOTOEXCITED CARRIERS; POTENTIAL FLUCTUATIONS; TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;

PHOTOLUMINESCENCE SPECTROSCOPY;

OPTICAL PROPERTIES;

EID: 84875132804     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4794904     Document Type: Article

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