Microwave performance of 0.3-μm gate-length multi-finger AlGaN/GaN heterojunction FETs with minimized current collapse

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2431-2434

  Kunihiro, Kazuaki ^a   Kasahara, Kensuke ^a   Takahashi, Yuji ^a   Ohno, Yasuo ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Current collapse; Electron beam; Heterojunction; Microwave; Nitride semiconductors; Power FET

Indexed keywords

CAPACITANCE; ELECTRON BEAM LITHOGRAPHY; FIELD EFFECT TRANSISTORS; MICROWAVES; MILLIMETER WAVES; NATURAL FREQUENCIES; OSCILLATIONS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

AIR BRIDGE INTERCONNECTION; ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; OSCILLATION FREQUENCY;

HETEROJUNCTIONS;

EID: 0033689668     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2431     Document Type: Article

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