-
1
-
-
6944229531
-
Terahertz technology in biology and medicine
-
Oct
-
P. H. Siegel, "Terahertz technology in biology and medicine," IEEE Trans. Microw. Theory Techn., vol. 52, no. 10, pp. 2438-2447, Oct. 2004.
-
(2004)
IEEE Trans. Microw. Theory Techn
, vol.52
, Issue.10
, pp. 2438-2447
-
-
Siegel, P.H.1
-
2
-
-
41149146731
-
Terahertz spectroscopy and imaging for defense and security applications
-
Aug
-
H. Liu, H. Zhong, N. Karpowicz, Y. Chen, and X. Zhang, "Terahertz spectroscopy and imaging for defense and security applications," Proc. IEEE, vol. 95, no. 8, pp. 1514-1527, Aug. 2007.
-
(2007)
Proc IEEE
, vol.95
, Issue.8
, pp. 1514-1527
-
-
Liu, H.1
Zhong, H.2
Karpowicz, N.3
Chen, Y.4
Zhang, X.5
-
3
-
-
80052479029
-
THz imaging radar for standoff personnel screening
-
Sep.
-
K. Cooper, R. Dengler, N. Llombart, B. Thomas, and G. C. H. Siegel, "THz imaging radar for standoff personnel screening," IEEE Trans. Terahertz Sci. Tech., vol. 1, no. 1, pp. 169-182, Sep. 2011.
-
(2011)
IEEE Trans. Terahertz Sci. Tech
, vol.1
, Issue.1
, pp. 169-182
-
-
Cooper, K.1
Dengler, R.2
Llombart, N.3
Thomas, B.4
Siegel, G.C.H.5
-
4
-
-
84860695196
-
280GHz and 860GHz image sensors using Schottky-barrier diodes in 0.13 m digital CMOS
-
Feb
-
R. Han, Y. Zhang, Y. Kim, D. Y. Kim, H. Shichijo, E. Afshari, and O. Kenneth, "280GHz and 860GHz image sensors using Schottky-barrier diodes in 0.13 m digital CMOS," in IEEE Int. Solid-State Circuits Conf. Dig., Feb. 2012, pp. 254-256.
-
(2012)
IEEE Int. Solid-State Circuits Conf. Dig.
, pp. 254-256
-
-
Han, R.1
Zhang, Y.2
Kim, Y.3
Kim, D.Y.4
Shichijo, H.5
Afshari, E.6
Kenneth, O.7
-
5
-
-
84860676264
-
A 1 kpixel CMOS camera chip for 25 FPS real-time terahertz imaging applications
-
Feb
-
H. Sherry, J. Grzyb, Y. Zhao, R. Hadi, A. Cathelin, A. Kaiser, and U. Pfeiffer, "A 1 kpixel CMOS camera chip for 25 FPS real-time terahertz imaging applications," in IEEE Int. Solid-State Circuits Conf. Dig., Feb. 2012, pp. 252-254.
-
(2012)
IEEE Int. Solid-State Circuits Conf. Dig.
, pp. 252-254
-
-
Sherry, H.1
Grzyb, J.2
Zhao, Y.3
Hadi, R.4
Cathelin, A.5
Kaiser, A.6
Pfeiffer, U.7
-
6
-
-
80052461183
-
Present and future of terahertz communications
-
Sep.
-
H. Song and T. Nagatsuma, "Present and future of terahertz communications," IEEE Trans. Terahertz Sci. Tech., vol. 1, no. 1, pp. 256-263, Sep. 2011.
-
(2011)
IEEE Trans. Terahertz Sci. Tech
, vol.1
, Issue.1
, pp. 256-263
-
-
Song, H.1
Nagatsuma, T.2
-
7
-
-
84866632235
-
A 260 GHz fully integrated CMOS transceiver for wireless chip-to-chip communication
-
Jun
-
J. Park, S. Kang, S. V. Thyagarajan, E. Alon, and A. M. Niknejad, "A 260 GHz fully integrated CMOS transceiver for wireless chip-to-chip communication," in VLSI Circuits Symp., Jun. 2012, pp. 48-49.
-
(2012)
VLSI Circuits Symp.
, pp. 48-49
-
-
Park, J.1
Kang, S.2
Thyagarajan, S.V.3
Alon, E.4
Niknejad, A.M.5
-
8
-
-
84858151626
-
W-band amplifiers with 6-dB noise figure and milliwatt-level 170-200-GHz doublers in 45-nm CMOS
-
Mar.
-
B. Cetinoneri, Y. Atesal, A. Fung, and G. Rebeiz, "W-band amplifiers with 6-dB noise figure and milliwatt-level 170-200-GHz doublers in 45-nm CMOS," IEEE Trans. Microw. Theory Techn., vol. 60, no. 3, pp. 692-701, Mar. 2012.
-
(2012)
IEEE Trans. Microw. Theory Techn
, vol.60
, Issue.3
, pp. 692-701
-
-
Cetinoneri, B.1
Atesal, Y.2
Fung, A.3
Rebeiz, G.4
-
9
-
-
84936896840
-
Power gain in feedback amplifier
-
Jun
-
S. Mason, "Power gain in feedback amplifier," IRE Trans. Circuit Theory, vol. CT-1, no. 2, pp. 20-25, Jun. 1954.
-
(1954)
IRE Trans. Circuit Theory
, vol.CT-1
, Issue.2
, pp. 20-25
-
-
Mason, S.1
-
11
-
-
80053627397
-
InP HBT IC technology for terahertz frequencies: Fundamental oscillators up to 0.57 THz
-
Oct.
-
M. Seo, M. Urteaga, J. Hacker, A. Young, Z. Griffith, V. Jain, R. Pierson, P. Rowell, A. Skalare, A. Peralta, R. Lin, D. Pukala, and M. Rodwell, "InP HBT IC technology for terahertz frequencies: Fundamental oscillators up to 0.57 THz," IEEE J. Solid-State Circuits, vol. 46, no. 10, pp. 2203-2214, Oct. 2011.
-
(2011)
IEEE J. Solid-State Circuits
, vol.46
, Issue.10
, pp. 2203-2214
-
-
Seo, M.1
Urteaga, M.2
Hacker, J.3
Young, A.4
Griffith, Z.5
Jain, V.6
Pierson, R.7
Rowell, P.8
Skalare, A.9
Peralta, A.10
Lin, R.11
Pukala, D.12
Rodwell, M.13
-
12
-
-
80052485541
-
THz monolithic integrated circuits using InP high electron mobility transistors
-
Sep.
-
W. Deal, X. B. Mei, K. Leong, V. Radisic, S. Sarkozy, and R. Lai, "THz monolithic integrated circuits using InP high electron mobility transistors," IEEE Trans. Terahertz Sci. Tech., vol. 1, no. 1, pp. 25-32, Sep. 2011.
-
(2011)
IEEE Trans. Terahertz Sci. Tech
, vol.1
, Issue.1
, pp. 25-32
-
-
Deal, W.1
Mei, X.B.2
Leong, K.3
Radisic, V.4
Sarkozy, S.5
Lai, R.6
-
13
-
-
77949978070
-
Wideband medium power amplifiers using a short gate-length gaas MMIC process
-
Jun
-
M. Morgan, E. Bryerton, H. Karimy, D. Dugas, L. G. K. Duh, X. Yang, P. Smith, and P. C. Chao, "Wideband medium power amplifiers using a short gate-length gaas MMIC process," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2009, pp. 541-544.
-
(2009)
IEEE MTT-S Int. Microw. Symp. Dig.
, pp. 541-544
-
-
Morgan, M.1
Bryerton, E.2
Karimy, H.3
Dugas, D.4
Duh, L.G.K.5
Yang, X.6
Smith, P.7
Chao, P.C.8
-
14
-
-
27844471999
-
Opening the terahertz window with integrated diode circuits
-
Oct
-
T.W. Crowe,W. L. Bishop, D. W. Porterfield, J. L. Hesler, and R. M. Weikle, "Opening the terahertz window with integrated diode circuits," IEEE J. Solid-State Circuits, vol. 40, no. 10, pp. 2104-2110, Oct. 2005.
-
(2005)
IEEE J. Solid-State Circuits
, vol.40
, Issue.10
, pp. 2104-2110
-
-
Crowe, T.W.1
Bishop, W.L.2
Porterfield, D.W.3
Hesler, J.L.4
Weikle, R.M.5
-
15
-
-
80052481811
-
An overview of solid-state integrated circuit amplifiers in the submillimeter-wave and THz regime
-
Sep.
-
L. A. Samoska, "An overview of solid-state integrated circuit amplifiers in the submillimeter-wave and THz regime," IEEE Trans. Terahertz Sci. Tech., vol. 1, no. 1, pp. 9-24, Sep. 2011.
-
(2011)
IEEE Trans. Terahertz Sci. Tech
, vol.1
, Issue.1
, pp. 9-24
-
-
Samoska, L.A.1
-
16
-
-
79952068808
-
High power terahertz and sub-millimeter wave oscillator design: A systematic approach
-
Mar.
-
O. Momeni and E. Afshari, "High power terahertz and sub-millimeter wave oscillator design: A systematic approach," IEEE J. Solid-State Circuits, vol. 46, no. 3, pp. 583-597, Mar. 2011.
-
(2011)
IEEE J. Solid-State Circuits
, vol.46
, Issue.3
, pp. 583-597
-
-
Momeni, O.1
Afshari, E.2
-
18
-
-
84860659754
-
A 283-to-296 GHz vco with 0.76mWpeak output power in 65 nm CMOS
-
Feb
-
Y. Tousi, O. Momeni, and E. Afshari, "A 283-to-296 GHz vco with 0.76mWpeak output power in 65 nm CMOS," in IEEE Int. Solid-State Circuits Conf. Dig., Feb. 2012, pp. 258-259.
-
(2012)
IEEE Int. Solid-State Circuits Conf. Dig.
, pp. 258-259
-
-
Tousi, Y.1
Momeni, O.2
Afshari, E.3
-
19
-
-
84871769667
-
A novel CMOS high-power terahertz VCO based on coupled oscillators: Theory and implementation
-
Dec.
-
Y. Tousi, O. Momeni, and E. Afshari, "A novel CMOS high-power terahertz VCO based on coupled oscillators: Theory and implementation," IEEE J. Solid-State Circuits, vol. 47, no. 12, pp. 3032-3042, Dec. 2012.
-
(2012)
IEEE J. Solid-State Circuits
, vol.47
, Issue.12
, pp. 3032-3042
-
-
Tousi, Y.1
Momeni, O.2
Afshari, E.3
-
20
-
-
77955149966
-
Progress and challenges towards terahertz CMOS integrated circuits
-
Aug.
-
E. Seok, D. Shim, C. Mao, R. Han, S. Sankaran, C. Cao, W. Knap, and O. Kenneth, "Progress and challenges towards terahertz CMOS integrated circuits," IEEE J. Solid-State Circuits, vol. 45, no. 8, pp. 1554-1564, Aug. 2010.
-
(2010)
IEEE J. Solid-State Circuits
, vol.45
, Issue.8
, pp. 1554-1564
-
-
Seok, E.1
Shim, D.2
Mao, C.3
Han, R.4
Sankaran, S.5
Cao, C.6
Knap, W.7
Kenneth, O.8
-
21
-
-
79955734859
-
A 220-275 GHz traveling wave frequency doubler with 6.6 dBm power at 244 GHz in 65 nm CMOS
-
Feb
-
O. Momeni and E. Afshari, "A 220-275 GHz traveling wave frequency doubler with 6.6 dBm power at 244 GHz in 65 nm CMOS," in IEEE Int. Solid-State Circuits Conf. Dig., Feb. 2011, pp. 286-288.
-
(2011)
IEEE Int. Solid-State Circuits Conf. Dig.
, pp. 286-288
-
-
Momeni, O.1
Afshari, E.2
-
22
-
-
82155185182
-
A broadband mm-wave and terahertz traveling-wave frequency multiplier on CMOS
-
Dec.
-
O. Momeni and E. Afshari, "A broadband mm-wave and terahertz traveling-wave frequency multiplier on CMOS," IEEE J. Solid-State Circuits, vol. 46, no. 12, pp. 2966-2976, Dec. 2011.
-
(2011)
IEEE J. Solid-State Circuits
, vol.46
, Issue.12
, pp. 2966-2976
-
-
Momeni, O.1
Afshari, E.2
-
23
-
-
79955971968
-
Active 220-and 325-GHz frequency multiplier chains in an SiGe HBT technology
-
May
-
E. Ojefors, B. Heinemann, and U. Pfeiffer, "Active 220-and 325-GHz frequency multiplier chains in an SiGe HBT technology," IEEE Trans. Microw. Theory Techn., vol. 59, no. 5, pp. 1311-1318, May 2011.
-
(2011)
IEEE Trans. Microw. Theory Techn
, vol.59
, Issue.5
, pp. 1311-1318
-
-
Ojefors, E.1
Heinemann, B.2
Pfeiffer, U.3
-
24
-
-
84866600731
-
A broadband 480-GHz passive frequency doubler in 65-nmbulk CMOS with 0.23mWoutput power
-
Jun
-
R. Han and E. Afshari, "A broadband 480-GHz passive frequency doubler in 65-nmbulk CMOS with 0.23mWoutput power," in IEEE Radio Freq. Integr. Circuits Symp., Jun. 2012, pp. 203-206.
-
(2012)
IEEE Radio Freq. Integr. Circuits Symp.
, pp. 203-206
-
-
Han, R.1
Afshari, E.2
-
25
-
-
0032632612
-
A high-power, fixed-tuned, millimeter-wave balanced frequency doubler
-
Apr
-
D. Porterfield, T. Crowe, R. Bradley, and N. Erickson, "A high-power, fixed-tuned, millimeter-wave balanced frequency doubler," IEEE Trans. Microw. Theory Techn., vol. 47, no. 4, pp. 419-425, Apr. 1999.
-
(1999)
IEEE Trans. Microw. Theory Techn
, vol.47
, Issue.4
, pp. 419-425
-
-
Porterfield, D.1
Crowe, T.2
Bradley, R.3
Erickson, N.4
-
26
-
-
66149184550
-
125-GHz diode frequency doubler in 0.13 m CMOS
-
May
-
C. Mao, C. Nallani, S. Sankaran, E. Seok, and O. Kenneth, "125-GHz diode frequency doubler in 0.13 m CMOS," IEEE J. Solid-State Circuits, vol. 44, no. 5, pp. 1531-1538, May 2009.
-
(2009)
IEEE J. Solid-State Circuits
, vol.44
, Issue.5
, pp. 1531-1538
-
-
Mao, C.1
Nallani, C.2
Sankaran, S.3
Seok, E.4
Kenneth, O.5
-
27
-
-
38949130099
-
Schottky barrier diode circuits in silicon for future millimeter-wave and terahertz applications
-
DOI 10.1109/TMTT.2007.914656
-
U.R. Pferiffer,C.Mishra,R. M. Rassel, S. Pinkett, and S. K. Reynolds, "Schottky barrier diode circuits in silicon for future millimeter-wave and terahertz applications," IEEE Trans. Microw. Theory Techn., vol. 56, no. 2, pp. 364-371, Feb. 2008. (Pubitemid 351222506)
-
(2008)
IEEE Transactions on Microwave Theory and Techniques
, vol.56
, Issue.2
, pp. 364-371
-
-
Pfeiffer, U.R.1
Mishra, C.2
Rassel, R.M.3
Pinkett, S.4
Reynolds, S.K.5
-
28
-
-
84874819454
-
Frequency multiplication with nonlinear capacitors-A circuit analysis
-
Dec
-
D. B. Leeson and S. Weinreb, "Frequency multiplication with nonlinear capacitors-A circuit analysis," Proc. IRE, vol. 47, no. 12, pp. 2076-2084, Dec. 1959.
-
(1959)
Proc. IRE
, vol.47
, Issue.12
, pp. 2076-2084
-
-
Leeson, D.B.1
Weinreb, S.2
-
30
-
-
66149182315
-
Prediction of power and efficiency of frequency doublers using varactors exhibiting a general nonlinearity
-
Aug
-
T. C. Leonard, "Prediction of power and efficiency of frequency doublers using varactors exhibiting a general nonlinearity," Proc. IEEE, vol. 51, no. 8, pp. 1135-1139, Aug. 1963.
-
(1963)
Proc IEEE
, vol.51
, Issue.8
, pp. 1135-1139
-
-
Leonard, T.C.1
-
31
-
-
84857359843
-
Idler circuits in varactor frequency multipliers
-
Mar
-
B. Diamond, "Idler circuits in varactor frequency multipliers," IEEE Trans. Circuit Theory, vol. CT-10, no. 1, pp. 35-44, Mar. 1963.
-
(1963)
IEEE Trans. Circuit Theory
, vol.CT-10
, Issue.1
, pp. 35-44
-
-
Diamond, B.1
-
33
-
-
84937743708
-
Some general properties of nonlinear elements-Part I: General energy relations
-
Jul
-
J. M. Manley and H. E. Rowe, "Some general properties of nonlinear elements-Part I: General energy relations," Proc. IRE, vol. 44, no. 7, pp. 904-913, Jul. 1956.
-
(1956)
Proc. IRE
, vol.44
, Issue.7
, pp. 904-913
-
-
Manley, J.M.1
Rowe, H.E.2
-
34
-
-
41849129915
-
High-Q thick-gate-oxide MOS varactors with subdesign-rule channel lengths for millimeter-wave applications
-
DOI 10.1109/LED.2008.917629
-
H. Xu and O. Kenneth, "High-thick-gate-oxideMOS varactors with subdesign-rule lengths for millimeter-wave applications," IEEE Electron Device Lett., vol. 29, no. 4, pp. 363-365, Apr. 2008. (Pubitemid 351492108)
-
(2008)
IEEE Electron Device Letters
, vol.29
, Issue.4
, pp. 363-365
-
-
Xu, H.1
Kenneth, K.2
-
36
-
-
84874840023
-
-
Agilent Technol., Santa Clara, CA, USA [Online]
-
"Advanced Design System 2011 documentation," Agilent Technol., Santa Clara, CA, USA, 2012. [Online]. Available: http://www.agilent. com/
-
(2012)
Advanced Design System 2011 Documentation
-
-
-
37
-
-
84874864290
-
-
Cascade Microtech Inc., Beaverton, OR, USA [Online]
-
"Infinity probe test data sheet," Cascade Microtech Inc., Beaverton, OR, USA, 2010. [Online]. Available: http://www.cmicro.com/
-
(2010)
Infinity Probe Test Data Sheet
-
-
-
38
-
-
41649107237
-
-
Virginia Diodes Inc., Charlottesville, VA [Online]
-
"Waveguide band designations," Virginia Diodes Inc., Charlottesville, VA, 2010. [Online]. Available: http://www.vadiodes.com/
-
(2010)
Waveguide Band Designations
-
-
-
40
-
-
80052670323
-
553-GHz signal generation in CMOS using a quadruple-push oscillator
-
Jun
-
D. Shim, D. Koukis, D. Arenas, D. Tanner, and O. Kenneth, "553-GHz signal generation in CMOS using a quadruple-push oscillator," in VLSI Circuits Symp., Jun. 2011, pp. 154-155.
-
(2011)
VLSI Circuits Symp.
, pp. 154-155
-
-
Shim, D.1
Koukis, D.2
Arenas, D.3
Tanner, D.4
Kenneth, O.5
|