Wideband medium power amplifiers using a short gate-length GaAs MMIC process

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2009, Pages 541-544

  Morgan, Matthew ^a   Bryerton, Eric ^a   Karimy, Hamid ^b   Dugas, Douglas ^b   Gunter, Liberty ^b   Duh, Kuanghann ^b   Yang, Xiaoping ^b   Smith, Phillip ^b   Chao, Pane Chane ^b  

^a NATIONAL RADIO ASTRONOMY OBSERVATORY   (United States)

^b BAE SYSTEMS   (United States)

Author keywords

Broadband amplifiers; Millimeter wave power amplifiers; MMIC amplifiers

Indexed keywords

ATACAMA LARGE MILLIMETER ARRAYS; CHIPSET; FREQUENCY AMPLIFIERS; GAAS; GATE-LENGTH; HIGH-POWER; LOCAL OSCILLATORS; MEDIUM POWER AMPLIFIER; MMIC AMPLIFIERS; OUTPUT POWER DENSITY; WIDE BANDWIDTH; WIDE-BAND;

GALLIUM ALLOYS; GALLIUM ARSENIDE; INSULATING MATERIALS; MICROWAVE AMPLIFIERS; MICROWAVE CIRCUITS; MICROWAVES; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM; TELESCOPES; WAVE POWER;

BROADBAND AMPLIFIERS;

EID: 77949978070     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2009.5165753     Document Type: Conference Paper

References (8)

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