High-Q thick-gate-oxide MOS varactors with subdesign-rule channel lengths for millimeter-wave applications

IEEE Electron Device Letters

Volumn 29, Issue 4, 2008, Pages 363-365

  Xu, Haifeng ^a   Kenneth, K ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

Channel length; CMOS; Millimeter wave; MOS varactor; Quality factor; Radio frequency (RF); Thick oxide

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUIT LAYOUT; LEAKAGE CURRENTS; MILLIMETER WAVE DEVICES;

CAPACITANCE RATIO; MOS VARACTOR; QUALITY FACTOR; RADIO FREQUENCY;

VARACTORS;

EID: 41849129915     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.917629     Document Type: Article

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