Probing strain at the nanoscale with X-ray diffraction in microelectronic materials induced by stressor elements

Thin Solid Films

Volumn 530, Issue , 2013, Pages 85-90

  Murray, Conal E ^a   Polvino, S M ^b   Noyan, I C ^b   Cai, Z ^c   Maser, J ^c,d   Holt, M ^d  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Department of Earth and Environmental Sciences   (United States)

^c ARGONNE NATIONAL LABORATORY   (United States)

^d ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

Microelectronics; Stress; X ray diffraction

Indexed keywords

CHANNEL REGION; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; ELASTIC RESPONSE; ESHELBY INCLUSION; EXPERIMENTAL DATUM; FREE EDGE; MECHANICAL MODEL; MICRO BEAMS; MICROELECTRONIC MATERIALS; NANO BEAMS; NANO SCALE; ROTATION DISTRIBUTION; SI-BASED; SILICON-ON-INSULATOR DEVICES; SOI DEVICES; STRAIN DISTRIBUTIONS; STRAIN ENGINEERING; SUBMICRON SCALE; TRANSISTOR MOBILITY;

BOUNDARY ELEMENT METHOD; MICROELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; STRESSES; X RAY DIFFRACTION;

STRAIN;

EID: 84874782695     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.05.043     Document Type: Conference Paper

References (24)

1. J. Bardeen, and W. Shockley Phys. Rev. 80 1950 72
2. C.S. Smith Phys. Rev. 94 1954 42
3. S. Ito, H. Namba, T. Hirata, K. Ando, S. Koyama, N. Ikezawa, T. Suzuki, T. Saitoh, and T. Horiuchi Microelectron. Reliab. 42 2002 201
4. S.E. Thompson, M. Armstrong, C. Auth, S. Cea, R. Chau, G. Glass, T. Hoffman, J. Klaus, Z. Ma, B. McIntyre, A. Murthy, B. Obradovic, L. Shifren, S. Sivakumar, S. Tyagi, T. Ghani, K. Mistry, M. Bohr, and Y. El-Mansy IEEE Electron Device Lett. 25 2004 191
5. K.-W. Ang, K.-J. Chui, V. Bliznetsov, C.-H. Tung, A. Du, N. Balasubramanian, G. Samudra, M. Li, and Y.-C. Yeo Appl. Phys. Lett. 86 2005 093102
6. F. Hüe, M. Hÿtch, H. Bender, F. Houdellier, and A. Claverie Phys. Rev. Lett. 100 2008 156602
7. J. Vanhellemont, I. De Wolf, K.G.F. Janssens, S. Frabboni, R. Balboni, and A. Armigliato Appl. Surf. Sci. 63 1993 119
8. I. DeWolf, H. Norström, and H.E. Maes J. Appl. Phys. 74 1993 4490
9. C. Georgi, M. Hecker, and E. Zschech J. Appl. Phys. 101 2007 123104
10. K. Usuda, T. Irisawa, T. Numata, N. Hirashita, and S. Takagi Semicond. Sci. Technol. 22 2007 S227
11. I.A. Blech, and E.S. Meieran J. Appl. Phys. 38 1967 2913
12. A. Minkevich, M. Gailhanou, J.-S. Micha, B. Charlet, V. Chamard, and O. Thomas Phys. Rev. B. 76 2007 104106
13. P.G. Evans, P.P. Rugheimer, M.G. Lagally, C.H. Lee, A. Lai, Y. Xiao, B. Lai, and Z. Cai J. Appl. Phys. 97 2005 103501
14. C.E. Murray, H.-F. Yan, I.C. Noyan, Z. Cai, and B. Lai J. Appl. Phys. 98 2005 013504
15. D. Shu, J. Maser, M. Holt, R.P. Winarski, C. Preissner, A. Smolyanitskiy, B. Lai, S. Vogt, and G.B. Stephenson AIP Conf. Proc. 879 2007 1321
16. C.E. Murray, Z. Ren, A. Ying, S.M. Polvino, I.C. Noyan, and Z. Cai Appl. Phys. Lett. 94 2009 063502
17. C.E. Murray, and I.C. Noyan R. Haight, F.M. Ross, J.B. Hannon, Handbook of Instrumentation and Techniques for Semiconductor Nanostructure Characterization 2011 World Scientific Publishing 300f
18. W.A. Brantley J. Appl. Phys. 44 1973 534
19. J.H. Davies ASME J. Appl. Mech. 70 2003 655
20. C.E. Murray J. Appl. Phys. 100 2006 103532
21. C.E. Murray, K.L. Saenger, O. Kalenci, S.M. Polvino, I.C. Noyan, B. Lai, and Z. Cai J. Appl. Phys. 104 2008 013530
22. J.H. Michell Proc. London Math. Soc. 32 1900 35
23. F. Rizzo Q. Appl. Math. 25 1967 83
24. C.E. Murray, A. Ying, S.M. Polvino, I.C. Noyan, M. Holt, and J. Maser J. Appl. Phys. 109 2011 083543