Microfabricated strained substrates for Ge epitaxial growth

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Evans, P G ^a   Rugheimer, P P ^a   Lagally, M G ^a   Lee, C H ^a,c   Lal, A ^a,d   Xiao, Y ^b   Lai, B ^b   Cai, Z ^b  

^a University of Wisconsin Madison   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c VEECO INSTRUMENTS INC   (United States)

^d School of Chemical and Molecular Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON-ON-INSULATOR (SOI); STRAINED SUBSTRATES; SURFACE PROCESSES; SURFACE STRAINS;

BENDING (DEFORMATION); CAMERAS; CHARGE COUPLED DEVICES; EPITAXIAL GROWTH; FABRICATION; SILICON NITRIDE; STRAIN RATE; SUBSTRATES; SURFACE PHENOMENA; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

GERMANIUM;

EID: 21044450223     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1894579     Document Type: Article

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