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Volumn 94, Issue 6, 2009, Pages

Strain measured in a silicon-on-insulator, complementary metal-oxide-semiconductor device channel induced by embedded silicon-carbon source/drain regions

(6) Murray, Conal E a Ren, Z b Ying, A c Polvino, S M c Noyan, I C c Cai, Z d

a IBM T J WATSON RESEARCH CENTER (United States)

b IBM RESEARCH (United States)

c Columbia University ^* (United States)

d ARGONNE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROSENSORS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE;

ANALYTICAL MODELING; CHANNEL REGIONS; CLOSED FORMS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DEVICE CHANNELS; DIRECT MEASUREMENTS; IN-SITU; LATTICE PARAMETERS; MECHANICAL CONSTRAINTS; SILICON ON INSULATORS; SOI CHANNELS; SOI DEVICES; SOURCE/DRAIN REGIONS; STRAIN DISTRIBUTIONS; X-RAY MICROBEAM DIFFRACTIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 60349089316 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3079656 Document Type: Article

Times cited : (23)

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