-
2
-
-
0003788668
-
-
(University of Pennsylvania, Philadelphia)
-
A. L. McWhorter, Semiconductor Surface Physics (University of Pennsylvania, Philadelphia, 1957), pp. 207-228.
-
(1957)
Semiconductor Surface Physics
, pp. 207-228
-
-
Mcwhorter, A.L.1
-
3
-
-
33750324680
-
1/F and RTS noise in submicron devices: Faster is noisier
-
DOI 10.1063/1.2138649, UNSOLVED PROBLEMS OF NOISE AND FLUCTUATIONS: UPoN 2005: Fourth International Conference on Unsolved Problems of Noise and Fluctuations in Physics, Biology, and High Technology
-
L. K. J. Vandamme and M. Macucci, AIP Conf. Proc. 800, 436 (2005). 10.1063/1.2138649 (Pubitemid 44632686)
-
(2005)
AIP Conference Proceedings
, vol.800
, pp. 436-443
-
-
Vandamme, L.K.J.1
Macucci, M.2
-
4
-
-
33846592716
-
-
0038-1101, 10.1016/j.sse.2006.12.003
-
E. Simoen, A. Mercha, C. Claeys, and N. Lukyanchikova, Solid-State Electron. 0038-1101 51, 16 (2007). 10.1016/j.sse.2006.12.003
-
(2007)
Solid-State Electron.
, vol.51
, pp. 16
-
-
Simoen, E.1
Mercha, A.2
Claeys, C.3
Lukyanchikova, N.4
-
5
-
-
0026144142
-
-
0031-8965, 10.1002/pssa.2211240225
-
G. Ghibaudo, O. Roux, C. H. Nguyen-Duc, F. Balestra, and J. Brini, Phys. Status Solidi A 0031-8965 124, 571 (1991). 10.1002/pssa.2211240225
-
(1991)
Phys. Status Solidi A
, vol.124
, pp. 571
-
-
Ghibaudo, G.1
Roux, O.2
Nguyen-Duc, C.H.3
Balestra, F.4
Brini, J.5
-
6
-
-
59849089910
-
-
0003-6951, 10.1063/1.3079411
-
C. W. Lee, A. Afzalian, N. Dehdashti Akhavan, R. Yan, I. Ferain, and J. P. Colinge, Appl. Phys. Lett. 0003-6951 94, 053511 (2009). 10.1063/1.3079411
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 053511
-
-
Lee, C.W.1
Afzalian, A.2
Dehdashti Akhavan, N.3
Yan, R.4
Ferain, I.5
Colinge, J.P.6
-
7
-
-
77949275137
-
-
1748-3387, 10.1038/nnano.2010.15
-
J. P. Colinge, C. W. Lee, A. Afzalian, N. Dehdashti Akhavan, R. Yan, I. Ferain, P. Razavi, B. O'Neill, A. Blake, M. White, A. M. Kelleher, B. McCarthy, and R. Murphy, Nat. Nanotechnol. 1748-3387 5, 225 (2010). 10.1038/nnano.2010.15
-
(2010)
Nat. Nanotechnol.
, vol.5
, pp. 225
-
-
Colinge, J.P.1
Lee, C.W.2
Afzalian, A.3
Dehdashti Akhavan, N.4
Yan, R.5
Ferain, I.6
Razavi, P.7
O'neill, B.8
Blake, A.9
White, M.10
Kelleher, A.M.11
Mccarthy, B.12
Murphy, R.13
-
8
-
-
77249173867
-
-
0003-6951, 10.1063/1.3299014
-
J. P. Colinge, C. W. Lee, I. Ferain, N. Dehdashti Akhavan, R. Yan, P. Razavi, R. Yu, A. N. Nazarov, and R. T. Doria, Appl. Phys. Lett. 0003-6951 96, 073510 (2010). 10.1063/1.3299014
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 073510
-
-
Colinge, J.P.1
Lee, C.W.2
Ferain, I.3
Dehdashti Akhavan, N.4
Yan, R.5
Razavi, P.6
Yu, R.7
Nazarov, A.N.8
Doria, R.T.9
-
9
-
-
77949665564
-
-
0003-6951, 10.1063/1.3358131
-
C. W. Lee, A. N. Nazarov, I. Ferain, N. Dehdashti Akhavan, R. Yan, P. Razavi, R. Yu, R. T. Doria, and J. P. Colinge, Appl. Phys. Lett. 0003-6951 96, 102106 (2010). 10.1063/1.3358131
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 102106
-
-
Lee, C.W.1
Nazarov, A.N.2
Ferain, I.3
Dehdashti Akhavan, N.4
Yan, R.5
Razavi, P.6
Yu, R.7
Doria, R.T.8
Colinge, J.P.9
-
10
-
-
0025398785
-
Unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors
-
DOI 10.1109/16.47770
-
K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, IEEE Trans. Electron Devices 0018-9383 37, 654 (1990). 10.1109/16.47770 (Pubitemid 20699942)
-
(1990)
IEEE Transactions on Electron Devices
, vol.37
, Issue.3 PART 1
, pp. 654-665
-
-
Hung Kwok, K.1
Ko Ping, K.2
Hu Chenming3
Cheng Yiu, C.4
-
12
-
-
0036540242
-
Electrical noise and RTS fluctuations in advanced CMOS devices
-
DOI 10.1016/S0026-2714(02)00025-2, PII S0026271402000252
-
G. Ghibaudo and T. Boutchacha, Microelectron. Reliab. 0026-2714 42, 573 (2002). 10.1016/S0026-2714(02)00025-2 (Pubitemid 34498204)
-
(2002)
Microelectronics Reliability
, vol.42
, Issue.4-5
, pp. 573-582
-
-
Ghibaudo, G.1
Boutchacha, T.2
-
13
-
-
77956029919
-
-
0003-6951, 10.1063/1.3480424
-
D. Jang, J. W. Lee, K. Tachi, L. Montes, T. Ernst, G. T. Kim, and G. Ghibaudo, Appl. Phys. Lett. 0003-6951 97, 073505 (2010). 10.1063/1.3480424
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 073505
-
-
Jang, D.1
Lee, J.W.2
Tachi, K.3
Montes, L.4
Ernst, T.5
Kim, G.T.6
Ghibaudo, G.7
-
14
-
-
67650407666
-
-
1530-4388, 10.1109/TDMR.2009.2020406
-
P. Magnone, F. Crupi, G. Giusi, C. Pace, E. Simoen, C. Claeys, L. Pantisano, D. Maji, V. R. Rao, and P. Srinivasan, IEEE Trans. Device Mater. Reliab. 1530-4388 9, 180 (2009). 10.1109/TDMR.2009.2020406
-
(2009)
IEEE Trans. Device Mater. Reliab.
, vol.9
, pp. 180
-
-
Magnone, P.1
Crupi, F.2
Giusi, G.3
Pace, C.4
Simoen, E.5
Claeys, C.6
Pantisano, L.7
Maji, D.8
Rao, V.R.9
Srinivasan, P.10
-
15
-
-
0026958493
-
-
0038-1101, 10.1016/0038-1101(92)90264-D
-
S. H. Ng and C. Surya, Solid-State Electron. 0038-1101 35, 1803 (1992). 10.1016/0038-1101(92)90264-D
-
(1992)
Solid-State Electron.
, vol.35
, pp. 1803
-
-
Ng, S.H.1
Surya, C.2
-
16
-
-
40949130046
-
A low-frequency noise model for four-gate field-effect transistors
-
DOI 10.1109/TED.2007.914473
-
J. A. J. Tejada, A. L. Rodriguez, A. Godoy, J. A. L. Villanueva, F. M. Gomez-Campos, and S. Rodriguez-Bolivar, IEEE Trans. Electron Devices 0018-9383 55, 896 (2008). 10.1109/TED.2007.914473 (Pubitemid 351404550)
-
(2008)
IEEE Transactions on Electron Devices
, vol.55
, Issue.3
, pp. 896-903
-
-
Tejada, J.A.J.1
Rodriguez, A.L.2
Godoy, A.3
Villanueva, J.A.L.4
Gomez-Campos, F.M.5
Rodriguez-Bolivar, S.6
-
17
-
-
0005929774
-
-
0038-1101, 10.1016/0038-1101(78)90188-0
-
K. Kandiah and F. Whiting, Solid-State Electron. 0038-1101 21, 1079 (1978). 10.1016/0038-1101(78)90188-0
-
(1978)
Solid-State Electron.
, vol.21
, pp. 1079
-
-
Kandiah, K.1
Whiting, F.2
-
19
-
-
0026924811
-
-
0038-1101, 10.1016/0038-1101(92)90163-7
-
B. K. Jones and G. P. Taylor, Solid-State Electron. 0038-1101 35, 1285 (1992). 10.1016/0038-1101(92)90163-7
-
(1992)
Solid-State Electron.
, vol.35
, pp. 1285
-
-
Jones, B.K.1
Taylor, G.P.2
-
20
-
-
33645732562
-
-
0018-9383, 10.1109/TED.2006.870272
-
K. Akarvardar, B. M. Dufrene, S. Cristoloveanu, P. Gentil, B. J. Blalock, and M. M. Mojarradi, IEEE Trans. Electron Devices 0018-9383 53, 829 (2006). 10.1109/TED.2006.870272
-
(2006)
IEEE Trans. Electron Devices
, vol.53
, pp. 829
-
-
Akarvardar, K.1
Dufrene, B.M.2
Cristoloveanu, S.3
Gentil, P.4
Blalock, B.J.5
Mojarradi, M.M.6
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