Electronic devices: Nanowire transistors made easy

Nature Nanotechnology

Volumn 5, Issue 3, 2010, Pages 178-179

  Ionescu, Adrian M ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

NANOTECHNOLOGY;

ELECTRONIC DEVICE; NANOWIRE TRANSISTORS;

NANOSTRUCTURED MATERIALS;

NANOWIRE; SILICON;

ACCUMULATION MODE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR; CONDUCTANCE; DEGRADATION; ELECTRIC CAPACITANCE; ELECTRIC CURRENT; ELECTRODE; ELECTRON; FIELD EFFECT TRANSISTOR; PRIORITY JOURNAL; ROOM TEMPERATURE; SEMICONDUCTOR; SHORT SURVEY; VERTICAL SLIT FIELD EFFECT TRANSISTOR;

EID: 77749320248     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2010.38     Document Type: Short Survey

References (8)

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