Development of graphene FETs for high frequency electronics

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Lin, Yu Ming ^a   Jenkins, Keith ^a   Farmer, Damon ^a   Valdes Garcia, Alberto ^a   Avouris, Phaedon ^a   Sung, Chun Yung ^a   Chiu, Hsin Ying ^a   Ek, Bruce ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN BIAS; GATE LENGTH; GRAPHENE TRANSISTORS; HIGH-FREQUENCY ELECTRONICS; MOSFETS; OXIDE DEPOSITION; RF APPLICATIONS; SERIES RESISTANCES;

ELECTRON DEVICES; GRAPHENE; MESFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS;

GRAPHITE;

EID: 77952403431     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424378     Document Type: Conference Paper

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