Lead lanthanum zirconate titanate ceramic thin films for energy storage

ACS Applied Materials and Interfaces

Volumn 5, Issue 4, 2013, Pages 1474-1480

  Tong, Sheng ^a   Ma, Beihai ^b   Narayanan, Manoj ^b   Liu, Shanshan ^b   Koritala, Rachel ^b   Balachandran, Uthamalingam ^b   Shi, Donglu ^a  

^a 705 Engineering Research Center   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

base metal substrate; capacitor; energy storage; PLZT; relaxor ferroelectric; thin film

Indexed keywords

BUFFER LAYERS; CAPACITORS; COST EFFECTIVENESS; DEPOSITION; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC BREAKDOWN; ENERGY STORAGE; FERROELECTRIC MATERIALS; LANTHANUM COMPOUNDS; LEAD COMPOUNDS; NICKEL OXIDE; OXIDE FILMS; SCANNING ELECTRON MICROSCOPY; SILICON; SOL-GEL PROCESS; SOL-GELS;

BASE METALS; DC DIELECTRIC BREAKDOWN; DIELECTRIC BREAKDOWN STRENGTH; ENERGY STORAGE EFFICIENCIES; LANTHANUM NICKEL OXIDES; LEAD LANTHANUM ZIRCONATE TITANATE; PLZT; RELAXOR FERROELECTRIC;

THIN FILMS;

EID: 84874631357     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am302985u     Document Type: Article

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