Effects of PbO insert layer on the microstructure and energy storage performance of (042)-preferred PLZT antiferroelectric thick films

Journal of Materials Research

Volumn 27, Issue 13, 2012, Pages 1770-1775

  Wang, Ying ^a   Hao, Xihong ^a   Xu, Jinbao ^b  

^a INNER MONGOLIA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b XINJIANG TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY   (China)

Author keywords

Antiferroelectric; Dielectric properties; Energy storage; PLZT; Thick films

Indexed keywords

ANTI FERROELECTRICS; ANTIFERROELECTRIC FILMS; ELECTRICAL MEASUREMENT; ENERGY STORAGE DENSITY; FATIGUE ENDURANCES; INSERT LAYER; PLZT; PLZT FILMS; PREFERRED ORIENTATIONS; SATURATION POLARIZATION VALUES; SCANNING ELECTRON MICROSCOPY IMAGE; STORAGE EFFICIENCY; STORAGE PERFORMANCE; SURFACE MICROSTRUCTURES;

ANTIFERROELECTRICITY; DIELECTRIC PROPERTIES; LEAD; LEAD OXIDE; MICROSTRUCTURE; SCANNING ELECTRON MICROSCOPY; SOL-GEL PROCESS; THICK FILMS; X RAY DIFFRACTION; ZIRCONIUM;

ENERGY STORAGE;

EID: 84862564247     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2012.124     Document Type: Article

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