Freestanding ultrananocrystalline diamond films with homojunction insulating layer on conducting layer and their high electron field emission properties

ACS Applied Materials and Interfaces

Volumn 3, Issue 10, 2011, Pages 4007-4013

  Thomas, Joseph P ^a,b   Chen, Huang Chin ^a   Tai, Nyan Hwa ^b   Lin, I Nan ^a  

^a TAMKANG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED FIELD; BOTTOM ELECTRODES; CONDUCTING LAYERS; ELECTRON FIELD EMISSION; ELECTRON FIELD EMISSION PROPERTIES; ELECTRONIC APPLICATION; GRANULAR STRUCTURESS; HARSH ENVIRONMENT; HIGH POTENTIAL; HOMOJUNCTION; IN-SITU; IN-SITU DOPING; INSULATING LAYERS; LARGE-GRAIN; LOW FIELD; NANO-SIZE; SCHOTTKY BARRIERS; SHEET CARRIER CONCENTRATION; SI SUBSTRATES; ULTRANANOCRYSTALLINE DIAMOND FILMS; ULTRANANOCRYSTALLINE DIAMONDS;

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; DIAMONDS; ELECTRON EMISSION; ELECTRON MOBILITY; FIELD EMISSION; GRAIN BOUNDARIES; INSULATING MATERIALS; INSULATION; MATERIALS PROPERTIES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING;

CONDUCTIVE FILMS;

EID: 84874612102     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am200867c     Document Type: Article

References (37)

1. Sun, M.; Gao, Y.; Zhi, C.; Bando, Y.; Golberg, D. Nanotechnology 2011, 22, 145705
2. Zhai, T.; Fang, X.; Bando, Y.; Dierre, B.; Liu, B.; Zeng, H.; Xu, X.; Huang, Y.; Yuan, X.; Sekiguchi, T.; Golberg, D. Adv. Funct. Mater. 2009, 19, 2423
3. Fan, S.; Chapline, M. G.; Franklin, N. R.; Tombler, T. W.; Cassell, A. M.; Dai, H. Science 1999, 283, 512
4. Shang, N.; Papakonstantinou, P.; Wang, P.; Zakharov, A.; Palnitkar, U.; Lin, I. N.; Chu, M.; Stamboulis, A. ACS Nano 2009, 3, 1032
5. Zhu, W.; Kochanski, G. P.; Jin, S. Science 1998, 282, 1471
6. Geis, M. W.; Efremow, N. N.; Krohn, K. E.; Twichell, J. C.; Lyszczarz, T. M.; Kalish, R.; Greer, J. A.; Tabat, M. D. Nature 1998, 393, 431
7. Yamaguchi, H.; Masuzawa, T.; Nozue, S.; Kudo, Y.; Saito, I.; Koe, J.; Kudo, M.; Yamada, T.; Takakuwa, Y.; Okano, K. Phys. Rev. B 2009, 80, 165321
8. Geis, M. W.; Deneault, S.; Krohn, K. E.; Marchant, M.; Lyszczarz, T. M.; Cooke, D. L. Appl. Phys. Lett. 2005, 87, 192115
9. Okano, K.; Koizumi, S.; Silva, S. R. P.; Amaratunga, G. A. J. Nature 1996, 381, 140
10. Krueger, A. Adv. Mater. 2008, 20, 2445
11. Watanabe, H.; Nebel, C. E.; Shikata, S. Science 2009, 324, 1425
12. Furkert, S. A.; Wotherspoon, A.; Cherns, D.; Fox, N. A.; Fuge, G. M.; Heard, P. J.; Lansley, S. P. Appl. Phys. Lett. 2007, 90, 242109
13. Krauss, A. R.; Auciello, O.; Ding, M. Q.; Gruen, D. M.; Huang, Y.; Zhirnov, V. V.; Givargizov, E. I.; Breskin, A.; Chechen, R.; Shefer, E.; Konov, V.; Pimenov, S.; Karabutov, A.; Rakhimov, A.; Suetin, N. J. Appl. Phys. 2001, 89, 2958
14. Pradhan, D.; Lin, I. N. ACS Appl. Mater. Interfaces 2009, 1, 1444
15. Kajihara, S. A.; Antonelli, A.; Bernholc, J. Phys. Rev. Lett. 1991, 66, 2010
16. Bhattacharyya, S.; Auciello, O.; Birrell, J.; Carlisle, J. A.; Curtiss, L. A.; Goyette, A. N.; Gruen, D. M.; Krauss, A. R.; Schlueter, J.; Sumant, A.; Zapol, P. Appl. Phys. Lett. 2001, 79, 1441
17. Williams, O. A.; Curat, S.; Gerbi, J. E.; Gruen, D. M.; Jackman, R. B. Appl. Phys. Lett. 2004, 85, 1680
18. Ikeda, T.; Teii, K. Appl. Phys. Lett. 2009, 94, 143102
19. Chen, Y. C.; Tai, N. H.; Lin, I. N. Diam. Relat. Mater. 2008, 17, 457
20. Joseph, P. T.; Tai, N. H.; Lee, C. Y.; Niu, H.; Pong, W. F.; Lin, I. N. J. Appl. Phys. 2008, 103, 043720
21. Goss, J. P.; Briddon, P. R. Phys. Rev. B 2007, 75, 75202
22. Sternschulte, H.; Schreck, M.; Stritzker, B.; Bergmaier, A.; Dollinger, G. Diam. Relat. Mater. 2000, 9, 1046
23. Joseph, P. T.; Tai, N. H.; Lin, I. N. Appl. Phys. Lett. 2010, 97, 042107
24. Okumura, K.; Mort, J.; Machonkin, M. Appl. Phys. Lett. 1990, 57, 1907
25. Fowler, R. H.; Nordheim, L. Proc. Royal Soc. Lond. A 1928, 119, 173
26. Ferrari, A. C.; Robertson, J. Phys. Rev. B 2001, 63, 121405
27. Wang, C. S.; Chen, H. C.; Cheng, H. F.; Lin, I. N. J. Appl. Phys. 2010, 107, 034304
28. Geis, M. W.; Twichell, J. C.; Efremow, N. N.; Krohn, K.; Lyszczarz, T. M. Appl. Phys. Lett. 1996, 68, 2294
29. Bozeman, S. P.; Baumann, P. K.; Ward, B. L.; Powers, M. J.; Cuomo, J. J.; Nemanich, R. J.; Dreifus, D. L. Diamond Relat. Mater. 1996, 5, 802
30. Robertson, J.; Rutter, M. J. Diamond Relat. Mater. 1998, 7, 620
31. Robertson, J. Thin Solid Films 1997, 296, 61
32. Hsu, C. H.; Cloutier, S. G.; Palefsky, S.; Xu, J. Nano Lett. 2010, 10, 3272
33. Hirai, H.; Kondo, K. Science 1990, 253, 772
34. Prawer, S.; Peng, J. L.; Orwa, J. O.; McCallum, J. C.; Jamieson, D. N.; Bursill, L. A. Phys. Rev. B 2000, 62, 16360
35. Cui, J. B.; Stammler, M.; Ristein, J.; Ley, L. J. Appl. Phys. 2000, 88, 3667
36. Wisitsora-at, A.; Kang, W. P.; Davidson, J. L.; Kerns, D. V. Appl. Phys. Lett. 1997, 71, 3394
37. Karabutov, A. V.; Frolov, V. D.; Pimenov, S. M.; Konov, V. I. Diamond Relat. Mater. 1999, 8, 763