Process control & integration options of RMG technology for aggressively scaled devices

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2012, Pages 33-34

  Veloso, A ^a   Higuchi, Y ^a   Chew, S A ^a   Devriendt, K ^a   Ragnarsson, L A ^a   Sebaai, F ^a   Schram, T ^a   Brus, S ^a   Vecchio, E ^a   Kellens, K ^a   Rohr E ^a   Eneman, G ^a   Simoen, E ^a   Cho, M J ^a   Paraschiv, V ^a   Crabbe, Y ^a   Shi, X ^a   Tielens, H ^a   Van Ammel, A ^a   Dekkers, H ^a   Favia, P ^a   Geypen, J ^a   Bender, H ^a   Phatak, A ^b   Del Agua Borniquel, J ^b   Xu, K ^c   Allen, M ^c   Liu, C ^c   Xu, T ^c   Yoo, W S ^d   Thean, A ^a   Horiguchi, N ^a   more..

^a IMEC   (Belgium)

^b Applied Materials Belgium NV   (Belgium)

^c APPLIED MATERIALS INC   (United States)

^d WaferMasters Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYSIS TECHNIQUES; HIGH ASPECT RATIO; KEY FEATURE; MATERIALS SELECTION; OXYGEN SOURCES; PHYSICAL MECHANISM; POST-DEPOSITION; SCALED DEVICES; STRESS-INDUCED; TCAD SIMULATION; WET-ETCH;

ASPECT RATIO; COMPUTER SIMULATION; HAFNIUM OXIDES; MOS DEVICES; PROCESS CONTROL; TUNGSTEN;

INTEGRATED CIRCUITS;

EID: 84866559293     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2012.6242447     Document Type: Conference Paper

References (7)

1. K. Mistry et al., IEDM Tech. Dig. 2007, 247;
2. S. Natarajan et al., IEDM Tech. Dig. 2008, 941;
3. C.-H. Jan et al., IEDM Tech. Dig. 2010, 604;
4. S.-E. Phan et al., Korea STS:ISM Tech. Dig. 2006;
5. A. Veloso et al., VLSI Tech. Dig. 2011, 34;
6. J. Wang et al., VLSI Tech. Dig. 2007, 46;
7. B. Kaczer et al., IRPS Tech. Dig. 2008, 20.