Ge technology beyond Si CMOS

IOP Conference Series: Materials Science and Engineering

Volumn 41, Issue 1, 2012, Pages

  Chin, Albert ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS LOGIC; DOPANT ACTIVATION; FAST MOBILITY; GATE STACKS; GE ON INSULATORS; GE PMOSFET; GE TECHNOLOGY; HIGH ELECTRON MOBILITY; HIGH MOBILITY; HIGH-FIELD; HIGHER YIELD; III V ON INSULATORS; LARGE DEFECTS; LASER ANNEALING; LOW VOLTAGE OPERATION; NEW CHANNELS; NMOSFET; PMOSFET; SAVE ENERGY; SI CMOS; SI FACES; SUBTHRESHOLD SWING; SURFACE FERMI-LEVEL PINNING; TECHNOLOGY NODES; ULTRA-THIN-BODY; VALANCE BANDS;

ELECTRIC FIELDS; ELECTRON MOBILITY; HOLE MOBILITY; MICROELECTRONICS; MOSFET DEVICES; SEMICONDUCTING INDIUM; SILICON;

GERMANIUM;

EID: 84874521445     PISSN: 17578981     EISSN: 1757899X     Source Type: Conference Proceeding    
DOI: 10.1088/1757-899X/41/1/012002     Document Type: Conference Paper

References (10)

1. Huang C H, Yang M Y, Chin A, Chen W J, Zhu C X, Cho B J, Li M F and Kwong D L 2003 Very low defects and high performance Ge-On-Insulator p-MOSFETs with Al2 O3 gate dielectrics Symp. VLSI Tech. Dig. 119-120
2. Huang C H, Yu D S, Chin A, Chen W J, Zhu C X, Li M F, Cho B J and Kwong D L 2003 Fully silicided NiSi and germanided NiGe dual gates on SiO2 /Si and Al2 O3 /Ge-on-Insulator MOSFETs Int. Electron Devices Meeting Tech. Dig. 319-322
3. Chin A, Chen C, Yu D S, Kao H L, McAlister S P and Chi C C 2006 Comparison of Germanium-on-Insulator CMOS with InGaAs MOSFETs Materials Science in Semiconductor Processing (European Materials Research Society) vol 9 p 711-715 (Pubitemid 44856328)
4. Liao C C, Kao S, Chin A, Yu D S, Li M F, Zhu C and McAlister S P, 2006 Comparing high mobility InGaAs FETs with Si and GOI devices 64th Device Research Conf. p 85-86
5. Yu D S, Chin A, Laio C C, Lee C F, Cheng C F, Chen W J, Zhu C, Li M F, McAlister S P and Kwong D L 2004 3D GOI CMOSFETs with novel IrO2 (Hf) dual gates and high-κ dielectric on 1P6M-0.18μm-CMOS Int. Electron Devices Meeting Tech. Dig. 181-184 (Pubitemid 40928257)
6. Chen W B and Chin A 2009 Interfacial layer dependence on device property of high-κ TiLaO Ge/Si n-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness Appl. Phys. Lett. 95 212105
7. Chen W B, Shie B S, Cheng C H, Hsu K C, Chi C C and Chin A 2010 Higher κ metal- gate/high-κ/Ge n-MOSFETs with < 1 nm EOT using laser annealing Int. Electron Devices Meeting Tech. Dig. 420-423
8. Liao C C, Chin A, Su N C, Li M F and Wang S J, 2008 Low Vt gate-first Al/TaN/[Ir3 Si-HfSi2-x ]/HfLaON CMOS using simple process Symp. VLSI Tech. Dig. 190-191
9. Chen W B, Shie B S and Chin A 2011 Higher gate capacitance Ge n-MOSFETs using laser annealing IEEE Electron Devices Lett. 32 449
10. Zhu W J, Han J P and Ma T P 2004 Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-κ dielectrics IEEE Trans. Electron Devices 51 98