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Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 711-715

Comparison of InGaAs MOSFETs with germanium-on-insulator CMOS

Author keywords

Compound semiconductor FETs; Germanium on insulator; InGaAs MOSFET

Indexed keywords

CARRIER MOBILITY; INDIUM ALLOYS; LEAKAGE CURRENTS; SILICON; SUBSTRATES;

EID: 33845214169     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.066     Document Type: Article
Times cited : (14)

References (20)
  • 8
    • 33845218928 scopus 로고    scopus 로고
    • Huang CH, Yang MY, Chin A, Chen WJ, Zhu CX, Cho BJ, et al. Symp VLSI 2003:119.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.