Electrical measurement under atmospheric conditions of PbSe nanocrystal thin films passivated by remote plasma atomic layer deposition of Al 2O3

IEEE Transactions on Nanotechnology

Volumn 12, Issue 2, 2013, Pages 146-151

  Yoon, Woojun ^a   Smith, Anthony R ^a   Foos, Edward E ^a   Boercker, Janice E ^a   Heuer, William B ^b   Tischler, Joseph G ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNITED STATES NAVAL ACADEMY   (United States)

Author keywords

Carrier transport; nanocrystal; PbSe; remote plasma atomic layer deposition (ALD); thin film transistor (TFT)

Indexed keywords

ATMOSPHERIC CONDITIONS; C. THIN FILM TRANSISTOR (TFT); EFFECTIVE MOBILITIES; ELECTRICAL MEASUREMENT; HIGH DEPOSITION RATES; PBSE; REMOTE PLASMA ATOMIC LAYER DEPOSITIONS; THIN-FILM TRANSISTOR (TFTS);

AIR MOBILITY; ALUMINUM; CARRIER TRANSPORT; DEPOSITION; NANOCRYSTALS; PASSIVATION; PLASMAS; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS;

ATOMIC LAYER DEPOSITION;

EID: 84874174333     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2012.2234761     Document Type: Article

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