Thermoelectric transport and Hall measurements of low defect Sb 2Te3 thin films grown by atomic layer deposition

Semiconductor Science and Technology

Volumn 28, Issue 3, 2013, Pages

  Zastrow, S ^a   Gooth, J ^a   Boehnert, T ^a   Heiderich, S ^a   Toellner, W ^a   Heimann, S ^b   Schulz, S ^b   Nielsch, K ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT CONTENTS; ELECTRICAL CONDUCTIVITY; HALL COEFFICIENT; HALL MEASUREMENTS; INTENSIVE RESEARCH; LOW DEPOSITION TEMPERATURE; PRE-PATTERNING; ROOM TEMPERATURE; STANDARD LITHOGRAPHIES; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; THERMOELECTRIC TRANSPORT; TOPOLOGICAL INSULATORS;

ATOMIC LAYER DEPOSITION; DEFECTS; ELECTRIC CONDUCTIVITY; LITHOGRAPHY; PHASE CHANGE MEMORY; SILICON WAFERS; THIN FILMS; TRANSPORT PROPERTIES;

ANTIMONY;

EID: 84874043884     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/28/3/035010     Document Type: Article

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