Effect of gas ambient and varying RF sputtering power for bandgap narrowing of mixed (ZnO:GaN) thin films for solar driven hydrogen production

Journal of Power Sources

Volumn 232, Issue , 2013, Pages 74-78

  Shet, Sudhakar ^a,b   Yan, Yanfa ^c   Turner, John ^a   Al Jassim, Mowafak ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^c UNIVERSITY OF TOLEDO   (United States)

Author keywords

Band gap; Gas ambient; Photoelectrochemical; RF power; ZnO; ZnO:GaN

Indexed keywords

BAND GAP NARROWING; BAND GAP REDUCTION; CRYSTALLINITIES; GAS AMBIENTS; PHOTOELECTROCHEMICALS; POST ANNEALING; RF-POWER; RF-SPUTTERING; VISIBLE LIGHT REGION; ZNO;

ARGON; DEPOSITS; ENERGY GAP; GALLIUM NITRIDE; GASES; HYDROGEN PRODUCTION; THIN FILMS;

ZINC OXIDE;

EID: 84873354135     PISSN: 03787753     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpowsour.2013.01.015     Document Type: Article

References (32)

1. A. Fujishima, and K. Honda Nature 238 1972 37
2. R. Asahi, T. Morikawa, T. Ohwaki, K. Aoki, and Y. Taga Science 293 2001 269
3. O. Khaselev, and J.A. Turner Science 280 1998 425
4. V.M. Aroutiounian, V.M. Arakelyan, and G.E. Shahnazaryan Sol. Energy 78 2005 581
5. J. Yuan, M. Chen, J. Shi, and W. Shangguan Int. J. Hydrogen Energy 31 2006 1326
6. G.K. Mor, K. Shankar, M. Paulose, O.K. Varghese, and C.A. Grimes Nano Lett. 5 2005 191
7. B. O'Regan, and M. Grätzel Nature 353 1991 737
8. K. Kakiuchi, E. Hosono, and S. Fujihara J. Photochem. Photobiol. A: Chem. 179 2006 81
9. T.F. Jaramillo, S.H. Baeck, A. Kleiman-Shwarsctein, and E.W. McFarland Macromol. Rapid Commun. 25 2004 297
10. S.U.M. Khan, M. Al-Shahry, and W.B. Ingler Jr. Science 297 2002 2243
11. S. Sakthivel, and H. Kisch Angew. Chem. Int. Ed. 42 2003 4908
12. T. Umebayashi, T. Yamaki, H. Itoh, and K. Asai Appl. Phys. Lett. 81 2002 454
13. S. Shet, K.-S. Ahn, T. Deutsch, H. Wang, N. Ravindra, Y. Yan, J. Turner, and M. Al-Jassim J. Power Sources 195 2010 5801
14. S. Shet, K.-S. Ahn, H. Wang, N. Ravindra, Y. Yan, J. Turner, and M. Al-Jassim J. Mater. Sci. 45 2010 5218
15. D. Paluselli, B. Marsen, E.L. Miller, and R.E. Rocheleau Electrochem. Solid State Lett. 8 2005 G301
16. S. Pizzini, N. Butta, D. Narducci, and M. Palladino J. Electrochem. Soc. 136 1989 1945
17. S. Nakamura Science 281 1998 956
18. J. Beach, R. Collins, and J. Turner J. Electrochem. Soc. 150 2003 A899
19. K. Maeda, T. Takata, M. Hara, N. Saito, Y. Inoue, H. Kobayashi, and K. Domen J. Am. Chem. Soc. 127 2005 8286
20. S. Shet, K.-S. Ahn, T. Deutsch, H. Wang, N. Ravindra, Y. Yan, J. Turner, and M. Al-Jassim J. Mater. Res. 25 2010 69
21. S. Shet, K.-S. Ahn, N. Ravindra, Y. Yan, J. Turner, and M. Al-Jassim J. Mater. 62 2010 25
22. S. Shet, K.-S. Ahn, Y. Yan, T. Deutsch, K.M. Chrusrowski, J. Turner, M. Al-Jassim, and N. Ravindra J. Appl. Phys. 103 2008 073504
23. S.-H. Kang, J.-Y. Kim, Y. Kim, H.-S. Kim, and Y.-E. Sung J. Phys. Chem. C 111 2007 9614
24. J. Akikusa, and S.U.M. Khan Int. J. Hydrogen Energy 27 2002 863
25. M. Gratzel Nature 414 2001 338
26. M. Futsuhara, K. Yoshioka, and O. Takai Thin Solid Films 317 1998 322
27. S. Berrah, H. Abid, and A. Boukortt Phys. Scr. 74 2006 104
28. C.X. Xu, X.W. Sun, X.H. Zhang, L. Ke, and S.J. Chua Nanotechnology 15 2004 856
29. H. Wei, and A. Zunger Phys. Rev. B 37 1998 8958
30. S. Shet, K.-S. Ahn, N. Ravindra, Y. Yan, J. Turner, and M. Al-Jassim Thin Solid Films 519 2011 5983
31. K.-S. Ahn, Y. Yan, S. Shet, K. Jones, T. Deutsch, J. Turner, and M. Al-Jassim Appl. Phys. Lett. 93 2008 163117
32. C.L. Perkins, S.H. Lee, X. Li, S.E. Asher, and T.J. Coutts J. Appl. Phys. 97 2005 034907