Phase separation in Ga and N co-incorporated ZnO films and its effects on photo-response in photoelectrochemical water splitting

Thin Solid Films

Volumn 519, Issue 18, 2011, Pages 5983-5987

  Shet, Sudhakar ^a,b   Ahn, Kwang Soon ^c   Nuggehalli, Ravindra ^b   Yan, Yanfa ^a   Turner, John ^a   Al Jassim, Mowafak ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^c Yeungnam University   (South Korea)

Author keywords

Band gap; Co doping; Gas ambient; Phase separation; Photoelectrochemistry; Sputtering; X ray diffraction; Zinc oxide

Indexed keywords

BAND GAPS; CO-DOPING; COSPUTTERING; CRYSTALLINITIES; GAS AMBIENT; GROWTH CONDITIONS; PHASE SEGREGATIONS; PHOTOELECTROCHEMICALS; PHOTOELECTROCHEMISTRY; PHOTOGENERATED ELECTRONS; PHOTORESPONSES; POST ANNEALING; RECOMBINATION RATE; ROOM TEMPERATURE; WATER SPLITTING; ZNO; ZNO FILMS; ZNO THIN FILM;

COBALT; ELECTROCHEMISTRY; ENERGY GAP; GALLIUM; METALLIC FILMS; NITROGEN; OPTICAL FILMS; PHASE SEPARATION; SEMICONDUCTOR DOPING; THIN FILMS; X RAY DIFFRACTION; ZINC; ZINC OXIDE;

GAS PERMEABLE MEMBRANES;

EID: 79958163782     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.03.050     Document Type: Article

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