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Volumn 45, Issue 19, 2010, Pages 5218-5222

Effect of substrate temperature on the photoelectrochemical responses of Ga and N co-doped ZnO films

(7) Shet, Sudhakar a,b Ahn, Kwang Soon c Wang, Heli a Nuggehalli, Ravindra b Yan, Yanfa a Turner, John a Al Jassim, Mowafak a

a NATIONAL RENEWABLE ENERGY LABORATORY (United States)

b NEW JERSEY INSTITUTE OF TECHNOLOGY (United States)

c Yeungnam University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CO-DOPED ZNO; CO-DOPING; COATED GLASS; CRYSTALLINITIES; DIFFERENT SUBSTRATES; GAS AMBIENTS; IMPURITY INCORPORATION; PHOTOELECTROCHEMICAL RESPONSE; PHOTOELECTROCHEMICALS; RADIO-FREQUENCY-MAGNETRON SPUTTERING; SUBSTRATE TEMPERATURE; WIDE BAND GAP; ZNO FILMS; ZNO THIN FILM;

DOPING (ADDITIVES); ENERGY GAP; GALLIUM; GALLIUM ALLOYS; LITHIUM COMPOUNDS; METALLIC FILMS; OPTICAL FILMS; THIN FILMS; TIN; TITANIUM COMPOUNDS; VAPOR DEPOSITION; ZINC OXIDE;

OXIDE FILMS;

EID: 77955473423 PISSN: 00222461 EISSN: 15734803 Source Type: Journal
DOI: 10.1007/s10853-010-4561-x Document Type: Article

Times cited : (32)

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