High hole mobility and thickness-dependent crystal structure in α,ω-dihexylsexithiophene single-monolayer field-effect transistors

Advanced Functional Materials

Volumn 23, Issue 5, 2013, Pages 554-564

  Mannebach, Ehren M ^a   Spalenka, Josef W ^a   Johnson, Phillip S ^b   Cai, Zhonghou ^c   Himpsel, F J ^b   Evans, Paul G ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b University of Wisconsin Madison   (United States)

^c ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

; dihexylsexithiophene; carbon edge; field effect mobility; field effect transistors; grazing incidence X ray diffraction; interfaces; near edge X ray absorption fine structure spectroscopy; organic monolayer field effect transistors; organic semiconductors; sulfur edge

Indexed keywords

FIELD-EFFECT; FIELD-EFFECT MOBILITIES; GRAZING INCIDENCE; GRAZING INCIDENCE X-RAY DIFFRACTION; HIGH MOBILITY; HOLE SCATTERING; IN-PLANE LATTICES; IN-SITU MEASUREMENT; LOCAL SYMMETRY; MOLECULAR AXIS; MOLECULAR MONOLAYER; NEAR EDGE X-RAY ABSORPTION FINE STRUCTURE SPECTROSCOPIES; SMALL-MOLECULE ORGANIC SEMICONDUCTOR; SOURCE-DRAIN CURRENT; SUBSTRATE SURFACE; SURFACE NORMALS; THICK FILM STRUCTURES; THIOPHENE RING;

ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; HOLE MOBILITY; INTERFACES (MATERIALS); LATTICE CONSTANTS; MAGNETIC FILMS; MOLECULES; SEMICONDUCTING ORGANIC COMPOUNDS; SOLVENTS; SULFUR; THIOPHENE; TWO DIMENSIONAL; X RAY ABSORPTION FINE STRUCTURE SPECTROSCOPY; X RAY DIFFRACTION;

MONOLAYERS;

EID: 84873342944     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201201548     Document Type: Article

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