Performance and transport characteristics of α,ω -dihexylsexithiophene- based transistors with a high roomerature mobility of 0.16 cm2 v s

Applied Physics Letters

Volumn 92, Issue 22, 2008, Pages

  Seo, Hoon Seok ^a   Zhang, Ying ^a   Jang, Young Se ^a   Choi, Jong Ho ^a  

^a Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MODIFICATION; GATE DIELECTRICS; GATES (TRANSISTOR); MULTITASKING; PHOTOACOUSTIC EFFECT; SILICON; STRUCTURAL PROPERTIES; SURFACE ACTIVE AGENTS; THICK FILMS; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; VAPOR DEPOSITION;

ACTIVE LAYERS; CHANNEL LENGTHS; CLUSTER BEAM DEPOSITION; FIELD-EFFECT MOBILITY (FEM); GATE DIELECTRIC THICKNESS; GEOMETRIC EFFECTS; HIGH QUALITY (HQ); MORPHOLOGICAL PROPERTIES; OCTADECYLTRICHLOROSILANE (ODS); ORGANIC THIN FILM TRANSISTORS (O TFT); PRE TREATMENTS; SURFACE MODIFICATIONS; TEMPERATURE DEPENDENCES; TRANSISTOR PERFORMANCE; TRANSPORT CHARACTERISTICS;

MOLECULAR BEAM EPITAXY;

EID: 44849085986     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2929716     Document Type: Article

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