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Volumn 34, Issue 2, 2013, Pages 229-231

Self-rectifying resistive-switching device with a-Si/WO3 bilayer

Author keywords

Crossbar; resistive switching (RS); self rectifying

Indexed keywords

BI-LAYER; BI-LAYER STRUCTURE; CONDUCTIVE FILAMENTS; CROSS-BAR STRUCTURES; CROSSBAR; CURRENT RATIOS; EFFECTIVE SOLUTION; PROTOTYPE DEVICES; RECTIFYING BEHAVIORS; RECTIFYING PROPERTIES; REPRODUCIBILITIES; RESISTIVE SWITCHING; SCHOTTKY CONTACTS; SELF-RECTIFYING;

EID: 84873059808     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2232640     Document Type: Article
Times cited : (55)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.