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Volumn 39, Issue 3, 2013, Pages 2561-2566

Transparent Al-In-Zn-O Oxide semiconducting films with various in composition for thin-film transistor applications

Author keywords

Al In Zn O; Oxide semiconductor; Thin film transistors

Indexed keywords

AL-IN-ZN-O; CO-SPUTTERING METHOD; EFFECT OF IN; NEGATIVE BIAS; NEGATIVE GATE; OXIDE SEMICONDUCTING FILMS; OXIDE SEMICONDUCTOR; SPUTTERING POWER;

EID: 84872953863     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2012.09.016     Document Type: Article
Times cited : (31)

References (16)
  • 1
    • 9744248669 scopus 로고    scopus 로고
    • Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
    • K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors Nature 432 2004 488 492
    • (2004) Nature , vol.432 , pp. 488-492
    • Nomura, K.1    Ohta, H.2    Takagi, A.3    Kamiya, T.4    Hirano, M.5    Hosono, H.6
  • 2
    • 0038136910 scopus 로고    scopus 로고
    • Transparent electronics
    • J.F. Wager Transparent electronics Science 300 2003 1245 1246
    • (2003) Science , vol.300 , pp. 1245-1246
    • Wager, J.F.1
  • 4
    • 34548852584 scopus 로고    scopus 로고
    • Effect of annealing temperature on the properties of IZO films and IZO based transparent TFTs
    • P. Barquinha, G. Gonçalves, L. Pereira, R. Martins, and E. Fortunato Effect of annealing temperature on the properties of IZO films and IZO based transparent TFTs Thin Solid Films 515 2007 8450 8454
    • (2007) Thin Solid Films , vol.515 , pp. 8450-8454
    • Barquinha, P.1    Gonçalves, G.2    Pereira, L.3    Martins, R.4    Fortunato, E.5
  • 5
    • 52949097961 scopus 로고    scopus 로고
    • Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
    • J.K. Jeong, H.W. Yang, J.H. Jeong, Y.G. Mo, and H.D. Kim Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors Applied Physics Letters 93 2008 123508
    • (2008) Applied Physics Letters , vol.93 , pp. 123508
    • Jeong, J.K.1    Yang, H.W.2    Jeong, J.H.3    Mo, Y.G.4    Kim, H.D.5
  • 6
    • 39749191514 scopus 로고    scopus 로고
    • Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
    • J.S. Park, J.K. Jeong, H.J. Chung, Y.G. Mo, and H.D. Kim Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water Applied Physics Letters 92 2008 072104
    • (2008) Applied Physics Letters , vol.92 , pp. 072104
    • Park, J.S.1    Jeong, J.K.2    Chung, H.J.3    Mo, Y.G.4    Kim, H.D.5
  • 10
    • 77956586457 scopus 로고    scopus 로고
    • Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 °c
    • E.G. Chung, Y.S. Chun, and S.Y. Lee Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 °C Applied Physics Letters 97 2010 102102
    • (2010) Applied Physics Letters , vol.97 , pp. 102102
    • Chung, E.G.1    Chun, Y.S.2    Lee, S.Y.3
  • 14
    • 77955160907 scopus 로고    scopus 로고
    • O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors
    • B. Ryu, H.K. Noh, E.A. Choi, and K.J. Chang O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors Applied Physics Letters 97 2010 022108
    • (2010) Applied Physics Letters , vol.97 , pp. 022108
    • Ryu, B.1    Noh, H.K.2    Choi, E.A.3    Chang, K.J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.