SCOPUS 정보 검색 플랫폼

Volumn 98, Issue 15, 2011, Pages

Growth kinetics of GaAs nanoneedles on silicon and sapphire substrates

(6) Dubrovskii, Vladimir G a,b Nazarenko, Maxim V a Chuang, Linus C c Ko, Wai Son c Ng, Kar Wei c Chang Hasnain, Connie c

a ST PETERSBURG ACADEMIC UNIVERSITY (Russian Federation)

b IOFFE INSTITUTE (Russian Federation)

c UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARRIVAL RATES; EXPERIMENTAL DATA; GA DIFFUSION; GAAS; GROWTH TIME; METALORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE SUBSTRATES; THEORETICAL MODELS; TIME DEPENDENCE; TIME EVOLUTIONS;

ASPECT RATIO; GALLIUM ARSENIDE; GROWTH KINETICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANONEEDLES; ORGANIC CHEMICALS; ORGANOMETALLICS; SAPPHIRE; SEMICONDUCTING GALLIUM;

GALLIUM ALLOYS;

EID: 79954593520 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3575556 Document Type: Article

Times cited : (6)

References (27)

1
- 0003978311
- Wiley, New York)
- D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (Wiley, New York, 1999).
- (1999) Quantum Dot Heterostructures
- Bimberg, D.¹ Grundmann, M.² Ledentsov, N.N.³

2
- 21544477864
- 0003-6951, 10.1063/1.96342
- L. Goldstein, F. Glas, J. Y. Marzin, M. N. Charasse, and G. Le Roux, Appl. Phys. Lett. 0003-6951 47, 1099 (1985). 10.1063/1.96342
- (1985) Appl. Phys. Lett. , vol.47 , pp. 1099
- Goldstein, L.¹ Glas, F.² Marzin, J.Y.³ Charasse, M.N.⁴ Le Roux, G.⁵

3
- 35748932911
- Nanoelectronics from the bottom up
- DOI 10.1038/nmat2028, PII NMAT2028
- W. Lu, W. C. M. Lieber, Nature Mater. 1476-1122 6, 841 (2007). 10.1038/nmat2028 (Pubitemid 350050579)
- (2007) Nature Materials , vol.6 , Issue.11 , pp. 841-850
- Lu, W.¹ Lieber, C.M.²

4
- 33748594961
- Nanowire photonics
- DOI 10.1016/S1369-7021(06)71652-2, PII S1369702106716522
- P. J. Pauzauskie and P. Yang, Mater. Today 1369-7021 9, 36 (2006). 10.1016/S1369-7021(06)71652-2 (Pubitemid 44380403)
- (2006) Materials Today , vol.9 , Issue.10 , pp. 36-45
- Pauzauskie, P.J.¹ Yang, P.²

5
- 0035851449
- 0003-6951, 10.1063/1.1418446
- B. J. Ohlsson, M. T. Björk, M. H. Magnusson, K. Deppert, and L. Samuelson, Appl. Phys. Lett. 0003-6951 79, 3335 (2001). 10.1063/1.1418446
- (2001) Appl. Phys. Lett. , vol.79 , pp. 3335
- Ohlsson, B.J.¹ Björk, M.T.² Magnusson, M.H.³ Deppert, K.⁴ Samuelson, L.⁵

6
- 33748417557
- Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires
- DOI 10.1103/PhysRevB.74.121302
- F. Glas, Phys. Rev. B 0556-2805 74, 121302 (R) (2006). 10.1103/PhysRevB.74.121302 (Pubitemid 44344165)
- (2006) Physical Review B - Condensed Matter and Materials Physics , vol.74 , Issue.12 , pp. 121302
- Glas, F.¹

7
- 33751122778
- 0003-6951, 10.1063/1.1753975
- R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 0003-6951 4, 89 (1964). 10.1063/1.1753975
- (1964) Appl. Phys. Lett. , vol.4 , pp. 89
- Wagner, R.S.¹ Ellis, W.C.²

8
- 77649134442
- 1936-0851, 10.1021/nn901699h
- A. L. Pan, R. B. Liu, M. H. Sun, and C. Z. Ning, ACS Nano 1936-0851 4, 671 (2010). 10.1021/nn901699h
- (2010) ACS Nano , vol.4 , pp. 671
- Pan, A.L.¹ Liu, R.B.² Sun, M.H.³ Ning, C.Z.⁴

9
- 61649114519
- 1530-6984, 10.1021/nl802700u
- J. A. Czaban, D. A. Thompson, and R. R. LaPierre, Nano Lett. 1530-6984 9, 148 (2009). 10.1021/nl802700u
- (2009) Nano Lett. , vol.9 , pp. 148
- Czaban, J.A.¹ Thompson, D.A.² Lapierre, R.R.³

10
- 38049051027
- 0003-6951, 10.1063/1.2832643
- L. C. Chuang, M. Moewe, S. Crankshaw, and C. Chang-Hasnain, Appl. Phys. Lett. 0003-6951 92, 013121 (2008). 10.1063/1.2832643
- (2008) Appl. Phys. Lett. , vol.92 , pp. 013121
- Chuang, L.C.¹ Moewe, M.² Crankshaw, S.³ Chang-Hasnain, C.⁴

11
- 70449896600
- 1862-6254, 10.1002/pssr.200903057
- G. E. Cirlin, V. G. Dubrovskii, I. P. Soshnikov, N. V. Sibirev, Y. B. Samsonenko, A. D. Bouravleuv, J. C. Harmand, and F. Glas, Phys. Status Solidi (RRL) 1862-6254 3, 112 (2009). 10.1002/pssr.200903057
- (2009) Phys. Status Solidi (RRL) , vol.3 , pp. 112
- Cirlin, G.E.¹ Dubrovskii, V.G.² Soshnikov, I.P.³ Sibirev, N.V.⁴ Samsonenko, Y.B.⁵ Bouravleuv, A.D.⁶ Harmand, J.C.⁷ Glas, F.⁸

12
- 33644878950
- Three-dimensional nanoscale composition mapping of semiconductor nanowires
- DOI 10.1021/nl051602p
- D. E. Perea, J. E. Allen, S. J. May, B. W. Wessels, D. N. Seidman, and L. J. Lauhon, Nano Lett. 1530-6984 6, 181 (2006). 10.1021/nl051602p (Pubitemid 43382948)
- (2006) Nano Letters , vol.6 , Issue.2 , pp. 181-185
- Perea, D.E.¹ Allen, J.E.² May, S.J.³ Wessels, B.W.⁴ Seidman, D.N.⁵ Lauhon, L.J.⁶

13
- 5444245579
- 1476-1122, 10.1038/nmat1220
- A. I. Persson, M. W. Larsson, S. Stengstrom, B. J. Ohlsson, L. Samuelson, and L. R. Wallenberg, Nature Mater. 1476-1122 3, 677 (2004). 10.1038/nmat1220
- (2004) Nature Mater. , vol.3 , pp. 677
- Persson, A.I.¹ Larsson, M.W.² Stengstrom, S.³ Ohlsson, B.J.⁴ Samuelson, L.⁵ Wallenberg, L.R.⁶

14
- 50849109170
- 0021-8979, 10.1063/1.2968345
- M. Moewe, L. C. Chuang, V. G. Dubrovskii, and C. Chang-Hasnain, J. Appl. Phys. 0021-8979 104, 044313 (2008). 10.1063/1.2968345
- (2008) J. Appl. Phys. , vol.104 , pp. 044313
- Moewe, M.¹ Chuang, L.C.² Dubrovskii, V.G.³ Chang-Hasnain, C.⁴

15
- 76749107066
- 0268-1242, 10.1088/0268-1242/25/2/024009
- K. A. Dick, P. Caroff, J. Bolinsson, M. E. Messing, J. Johansson, K. Deppert, R. L. Wallenberg, and L. Samuelson, Semicond. Sci. Technol. 0268-1242 25, 024009 (2010). 10.1088/0268-1242/25/2/024009
- (2010) Semicond. Sci. Technol. , vol.25 , pp. 024009
- Dick, K.A.¹ Caroff, P.² Bolinsson, J.³ Messing, M.E.⁴ Johansson, J.⁵ Deppert, K.⁶ Wallenberg, R.L.⁷ Samuelson, L.⁸

16
- 77949435323
- 1530-6984, 10.1021/nl903688v
- H. J. Joyce, J. Wong-Leung, O. Gao, H. Hoe Tan, and C. Jagadish, Nano Lett. 1530-6984 10, 908 (2010). 10.1021/nl903688v
- (2010) Nano Lett. , vol.10 , pp. 908
- Joyce, H.J.¹ Wong-Leung, J.² Gao, O.³ Hoe Tan, H.⁴ Jagadish, C.⁵

17
- 77954724825
- 0556-2805, 10.1103/PhysRevB.80.205305
- V. G. Dubrovskii, N. V. Sibirev, G. E. Cirlin, A. D. Bouravleuv, Y. B. Samsonenko, D. L. Dheeraj, H. L. Zhou, C. Sartel, J. C. Harmand, G. Patriarche, and F. Glas, Phys. Rev. B 0556-2805 80, 205305 (2009). 10.1103/PhysRevB.80. 205305
- (2009) Phys. Rev. B , vol.80 , pp. 205305
- Dubrovskii, V.G.¹ Sibirev, N.V.² Cirlin, G.E.³ Bouravleuv, A.D.⁴ Samsonenko, Y.B.⁵ Dheeraj, D.L.⁶ Zhou, H.L.⁷ Sartel, C.⁸ Harmand, J.C.⁹ Patriarche, G.¹⁰ Glas, F.¹¹

18
- 34248191178
- Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process
- DOI 10.1021/nl062755v
- H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, Y. Kim, X. Zhang, Y. Guo, and J. Zou, Nano Lett. 1530-6984 7, 921 (2007). 10.1021/nl062755v (Pubitemid 46717734)
- (2007) Nano Letters , vol.7 , Issue.4 , pp. 921-926
- Joyce, H.J.¹ Gao, Q.² Tan, H.H.³ Jagadish, C.⁴ Kim, Y.⁵ Zhang, X.⁶ Guo, Y.⁷ Zou, J.⁸

19
- 47549091517
- 0003-6951, 10.1063/1.2949315
- M. Moewe, L. C. Chuang, S. Crankshaw, C. Chase, and C. Chang-Hasnain, Appl. Phys. Lett. 0003-6951 93, 023116 (2008). 10.1063/1.2949315
- (2008) Appl. Phys. Lett. , vol.93 , pp. 023116
- Moewe, M.¹ Chuang, L.C.² Crankshaw, S.³ Chase, C.⁴ Chang-Hasnain, C.⁵

20
- 79953897068
- 0003-6951, 10.1063/1.3567492
- L. C. Chuang, M. Moewe, K. W. Ng, T. -T. D. Tran, S. Crankshaw, R. Chen, W. S. Ko, and C. Chang-Hasnain, Appl. Phys. Lett. 0003-6951 98, 123101 (2011). 10.1063/1.3567492
- (2011) Appl. Phys. Lett. , vol.98 , pp. 123101
- Chuang, L.C.¹ Moewe, M.² Ng, K.W.³ Tran, T.-T.D.⁴ Crankshaw, S.⁵ Chen, R.⁶ Ko, W.S.⁷ Chang-Hasnain, C.⁸

21
- 77957894395
- 1528-7483, 10.1021/cg100495b
- V. G. Dubrovskii, N. V. Sibirev, X. Zhang, and R. A. Suris, Cryst. Growth Des. 1528-7483 10, 3949 (2010). 10.1021/cg100495b
- (2010) Cryst. Growth Des. , vol.10 , pp. 3949
- Dubrovskii, V.G.¹ Sibirev, N.V.² Zhang, X.³ Suris, R.A.⁴

22
- 37549064385
- 0021-8979, 10.1063/1.2809417
- M. Tchernycheva, L. Travers, G. Patriarche, F. Glas, J. C. Harmand, G. E. Cirlin, and V. G. Dubrovskii, J. Appl. Phys. 0021-8979 102, 094313 (2007). 10.1063/1.2809417
- (2007) J. Appl. Phys. , vol.102 , pp. 094313
- Tchernycheva, M.¹ Travers, L.² Patriarche, G.³ Glas, F.⁴ Harmand, J.C.⁵ Cirlin, G.E.⁶ Dubrovskii, V.G.⁷

23
- 67649544657
- 0021-8979, 10.1063/1.3131676
- M. C. Plante and R. R. LaPierre, J. Appl. Phys. 0021-8979 105, 114304 (2009). 10.1063/1.3131676
- (2009) J. Appl. Phys. , vol.105 , pp. 114304
- Plante, M.C.¹ Lapierre, R.R.²

24
- 77956316913
- 0556-2805, 10.1103/PhysRevB.81.235436
- J. C. Harmand, F. Glas, and G. Patriarche, Phys. Rev. B 0556-2805 81, 235436 (2010). 10.1103/PhysRevB.81.235436
- (2010) Phys. Rev. B , vol.81 , pp. 235436
- Harmand, J.C.¹ Glas, F.² Patriarche, G.³

25
- 77958502167
- 1931-7573, 10.1007/s11671-010-9698-7
- X. Zhang, V. G. Dubrovskii, N. V. Sibirev, G. E. Cirlin, C. Sartel, M. Tchernycheva, J. C. Harmand, and F. Glas, Nanoscale Res. Lett. 1931-7573 5, 1692 (2010). 10.1007/s11671-010-9698-7
- (2010) Nanoscale Res. Lett. , vol.5 , pp. 1692
- Zhang, X.¹ Dubrovskii, V.G.² Sibirev, N.V.³ Cirlin, G.E.⁴ Sartel, C.⁵ Tchernycheva, M.⁶ Harmand, J.C.⁷ Glas, F.⁸

26
- 43049094213
- 0556-2805, 10.1103/PhysRevB.76.153401
- L. E. Fröberg, W. Seifert, and J. Johansson, Phys. Rev. B 0556-2805 76, 153401 (2007). 10.1103/PhysRevB.76.153401
- (2007) Phys. Rev. B , vol.76 , pp. 153401
- Fröberg, L.E.¹ Seifert, W.² Johansson, J.³

27
- 34548637055
- Diffusion-controlled growth of semiconductor nanowires: Vapor pressure versus high vacuum deposition
- DOI 10.1016/j.susc.2007.04.122, PII S0039602807004451, ECOSS-24
- V. G. Dubrovskii, N. V. Sibirev, R. A. Suris, G. E. Cirlin, J. C. Harmand, and V. M. Ustinov, Surf. Sci. 0039-6028 601, 4395 (2007). 10.1016/j.susc.2007.04.122 (Pubitemid 47410184)
- (2007) Surface Science , vol.601 , Issue.18 , pp. 4395-4401
- Dubrovskii, V.G.¹ Sibirev, N.V.² Suris, R.A.³ Cirlin, G.E.⁴ Harmand, J.C.⁵ Ustinov, V.M.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.