The silicon Schottky diode on flexible substrates by transfer method

Applied Physics Letters

Volumn 102, Issue 2, 2013, Pages

  Oh, Tae Yeon ^a   Woo Jeong, Shin ^a   Chang, Seongpil ^a   Choi, Kookhyun ^a   Jun Ha, Hyun ^a   Kwon Ju, Byeong ^a  

^a Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER DIODES; FLEXIBLE SUBSTRATE; IDEALITY FACTORS; LIGHT INTENSITY; MICROLINE; P-TYPE; PHOTORESPONSES; RECTIFYING BEHAVIORS; RESPONSIVITY; REVERSE BIAS VOLTAGE; SCHOTTKY DIODES; SILICON ON INSULATOR WAFERS; SINGLE CRYSTALLINE SILICON; TRANSFER METHOD; TRANSFER PRINTING;

PHOTODETECTORS; PHOTONS; SCHOTTKY BARRIER DIODES; SILICON;

SILICON WAFERS;

EID: 84872726234     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4776685     Document Type: Article

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