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Volumn 102, Issue 2, 2013, Pages

Intrinsic bandgap of cleaved ZnO (11 2 ̄ 0) surfaces

Author keywords

[No Author keywords available]

Indexed keywords

CLEAVAGE SURFACES; GAP STATE; INTRINSIC SURFACES; NON-POLAR; SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY; SPECTROSCOPIC MEASUREMENTS; STEPPED SURFACES; TUNNEL CURRENTS; ZNO;

EID: 84872701641     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4776674     Document Type: Article
Times cited : (10)

References (37)
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    • (2010) Zinc Oxide
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  • 10
    • 0001241088 scopus 로고
    • 10.1103/PhysRevB.24.7275
    • I. Ivanov and J. Pollmann, Phys. Rev. B 24, 7275 (1981). 10.1103/PhysRevB.24.7275
    • (1981) Phys. Rev. B , vol.24 , pp. 7275
    • Ivanov, I.1    Pollmann, J.2
  • 11
    • 84998416633 scopus 로고
    • 10.1016/S0039-6028(87)81126-3
    • Y. R. Wang and C. B. Duke, Surf. Sci. 192, 309 (1987). 10.1016/S0039-6028(87)81126-3
    • (1987) Surf. Sci. , vol.192 , pp. 309
    • Wang, Y.R.1    Duke, C.B.2
  • 12
    • 0037438010 scopus 로고    scopus 로고
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    • B. Meyer and D. Marx, Phys. Rev. B 67, 035403 (2003). 10.1103/PhysRevB.67.035403
    • (2003) Phys. Rev. B , vol.67 , pp. 035403
    • Meyer, B.1    Marx, D.2
  • 15
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    • Chang, S.C.1    Mark, P.2
  • 29
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    • Compound semiconductor cleavage surface was shown to be stoichiometric directly after cleavage [see, e.g., for wurtzite structure materials and Ph. Ebert, Surf. Sci. Re 33, 121 (1999) and Curr. Opin. Solid State Mater. Sci. 5, 211 (2001) for zincblende materials]. 10.1103/PhysRevB.56.12321
    • Compound semiconductor cleavage surface was shown to be stoichiometric directly after cleavage [see, e.g., B. Siemens, C. Domke, Ph. Ebert, and K. Urban, Phys. Rev. B 56, 12321 (1997) for wurtzite structure materials and Ph. Ebert, Surf. Sci. Rep. 33, 121 (1999) and Curr. Opin. Solid State Mater. Sci. 5, 211 (2001) for zincblende materials]. 10.1103/PhysRevB.56.12321
    • (1997) Phys. Rev. B , vol.56 , pp. 12321
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.