Structure and electronic spectroscopy of steps on GaAs(110) surfaces

Surface Science

Volumn 606, Issue 1-2, 2012, Pages 28-33

  Gaan, S ^a   Feenstra, R M ^a   Ebert, Ph ^b   Dunin Borkowski, R E ^b   Walker, J ^c   Towe, E ^c  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

gallium arsenide; Scanning tunneling microscopy; Scanning tunneling spectroscopy; Surface steps

Indexed keywords

DRIVING FORCES; ELECTRONIC SPECTROSCOPY; GAAS; NORMAL VECTOR; SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY; SCANNING TUNNELING SPECTROSCOPY; STEP EDGE; STEP STRUCTURE; SURFACE STEPS; UNDOPED MATERIAL;

DANGLING BONDS; GALLIUM ALLOYS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; SPECTROSCOPY; SURFACES;

GALLIUM ARSENIDE;

EID: 80255123869     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2011.08.017     Document Type: Article

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