Oxygen pressure manipulations on the metal-insulator transition characteristics of highly (0 1 1)-oriented vanadium dioxide films grown by magnetron sputtering

Journal of Physics D: Applied Physics

Volumn 46, Issue 5, 2013, Pages

  Yu, Qian ^a   Li, Wenwu ^a   Liang, Jiran ^b,c   Duan, Zhihua ^a   Hu, Zhigao ^a   Liu, Jian ^b   Chen, Hongda ^b   Chu, Junhao ^a  

^a EAST CHINA NORMAL UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c TIANJIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING PROCESS; ENERGY REQUIREMENTS; EXCESS OXYGEN; FORBIDDEN GAPS; HEATING PROCESS; INFRARED TRANSMITTANCE; OXYGEN PRESSURE; TEMPERATURE DEPENDENT; VANADIUM DIOXIDE; VANADIUM DIOXIDE FILM;

DEFECTS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; VANADIUM; VANADIUM COMPOUNDS;

OXYGEN;

EID: 84872566264     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/5/055310     Document Type: Article

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