Intrinsic evolutions of optical functions, band gap, and higher-energy electronic transitions in VO 2 film near the metal-insulator transition region

Applied Physics Letters

Volumn 99, Issue 24, 2011, Pages

  Li, W W ^a   Yu, Q ^a   Liang, J R ^b,c   Jiang, K ^a   Hu, Z G ^a   Liu, J ^b   Chen, H D ^b   Chu, J H ^a  

^a EAST CHINA NORMAL UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c TIANJIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC TRANSITION; EXTINCTION COEFFICIENTS; HYSTERESIS BEHAVIOR; INTRINSIC EVOLUTION; METAL STATE; NEAR INFRARED; OPTICAL FUNCTION; TEMPERATURE RANGE; TRANSMITTANCE SPECTRA; VANADIUM DIOXIDE;

CARRIER CONCENTRATION; ENERGY GAP; METAL INSULATOR BOUNDARIES; OPTICAL CONDUCTIVITY; SEMICONDUCTOR INSULATOR BOUNDARIES; VANADIUM;

METAL INSULATOR TRANSITION;

EID: 83755178711     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3665626     Document Type: Article

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