Water growth on GeO2/Ge(100) stack and its effect on the electronic properties of GeO2

Journal of Physical Chemistry C

Volumn 117, Issue 1, 2013, Pages 165-171

  Mura, Atsushi ^a   Hideshima, Iori ^a   Liu, Zhi ^b   Hosoi, Takuji ^a   Watanabe, Heiji ^a   Arima, Kenta ^a  

^a OSAKA UNIVERSITY   (Japan)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY SEPARATIONS; FLAT-BAND VOLTAGE; GASPHASE; GE(100); METAL OXIDE SEMICONDUCTOR; MOLECULAR WATER; NEGATIVE SHIFT; POSITIVE CHARGES; WATER MOLECULE;

ELECTRONIC PROPERTIES; GERMANIUM; INTERFACES (MATERIALS); MONOLAYERS; PHOTOELECTRONS; RHODIUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

GERMANIUM OXIDES;

EID: 84872377531     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp304331c     Document Type: Article

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