Co-implantation: A simple way to grow doped Si nanocrystals embedded in SiO2

Materials Research Society Symposium Proceedings

Volumn 1455, Issue , 2012, Pages 37-42

  Mathiot, Daniel ^a   Khelifi, Rim ^a   Muller, Dominique ^a   Duguay, Sébastien ^b  

^a UNIVERSITÉ DE STRASBOURG   (France)

^b UNIVERSITÉ ET INSA DE ROUEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PROBES; ATOMIC SCALE; B ATOMS; CO-IMPLANTATION; N-TYPE DOPANTS; PROJECTED RANGE; SI NANOCRYSTAL; THERMAL ANNEALS;

ATOMS; DOPING (ADDITIVES); ELECTRON BEAMS; NANOCLUSTERS;

SILICON;

EID: 84879268300     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2012.1238     Document Type: Conference Paper

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