Investigations on opto-electronical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films annealed at different temperatures

Applied Surface Science

Volumn 265, Issue , 2013, Pages 169-175

  Kumar, B Rajesh ^a,b   Rao, T Subba ^b  

^a SRI VENKATESWARA UNIVERSITY   (India)

^b SRI KRISHNADEVARAYA UNIVERSITY   (India)

Author keywords

Annealing treatment; DC reactive magnetron sputtering; Electrical properties; Optical transmittance; Structural properties

Indexed keywords

ACTIVATION ENERGY; ALUMINA; ALUMINUM OXIDE; ANNEALING; ATOMIC FORCE MICROSCOPY; CONDUCTIVE FILMS; CRYSTALLITE SIZE; ELECTRIC PROPERTIES; ENERGY GAP; FIELD EMISSION MICROSCOPES; MAGNETRON SPUTTERING; OPACITY; OPTICAL PROPERTIES; OXIDE FILMS; SCANNING ELECTRON MICROSCOPY; STRUCTURAL PROPERTIES; SUBSTRATES; X RAY DIFFRACTION; ZINC SULFIDE;

ANNEALING TEMPERATURES; ANNEALING TREATMENTS; C-AXIS ORIENTATIONS; DC REACTIVE MAGNETRON SPUTTERING; ELECTRICAL CONDUCTIVITY; ELECTRON CONCENTRATION; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; ZINC ALUMINUM OXIDES;

THIN FILMS;

EID: 84871932033     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.10.158     Document Type: Article

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