Rapid thermal annealed Al-doped ZnO film for a UV detector

Materials Letters

Volumn 65, Issue 4, 2011, Pages 786-789

  Kim, Joondong ^a   Yun, Ju Hyung ^b   Jee, Sang Won ^c   Park, Yun Chang ^d   Ju, Minkyu ^e,f   Han, Seokkyu ^f   Kim, Youngkuk ^e   Kim, Jae Hyun ^a   Anderson, Wayne A ^b   Lee, Jung Ho ^c   Yi, Junsin ^e  

^a Korea Institute of Machine and Materials   (South Korea)

^b State University of New York   (United States)

^c Hanyang University   (South Korea)

^d National Nano Fab Center (NNFC)   (South Korea)

^e Sungkyunkwan University   (South Korea)

^f KPE Corporation   (South Korea)

Author keywords

Al doped ZnO (AZO); Metal semiconductor metal (MSM) structure; Photoelectric application; Rapid thermal annealing; UV detection

Indexed keywords

AL-DOPED ZNO; AZO FILMS; CO-SPUTTERING METHOD; DARK CONDITIONS; ELECTRICAL RESISTIVITY; HIGH QUALITY; LOW THERMAL BUDGET; METAL-SEMICONDUCTOR-METAL (MSM) STRUCTURE; METAL-SEMICONDUCTOR-METAL STRUCTURES; MSM DEVICES; OPTICAL TRANSMITTANCE; PHOTOELECTRIC APPLICATION; RAPID ANNEALING; RAPID THERMAL ANNEALING PROCESS; STRUCTURAL CHANGE; UV DETECTION; UV DETECTOR; UV ILLUMINATIONS; UV LIGHT;

ALUMINUM; ELECTRIC CONDUCTIVITY; FILM GROWTH; METAL ANALYSIS; METAL DETECTORS; METALS; OPACITY; PHOTOELECTRICITY; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

OPTICAL FILMS;

EID: 78650489734     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2010.11.065     Document Type: Article

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