The influence of defects and impurities in polycrystalline AlN films on the violet and blue photoluminescence

Vacuum

Volumn 83, Issue 5, 2009, Pages 865-868

  Chen, Da ^a,b   Wang, Jingjing ^b   Xu, Dong ^a   Zhang, Yafei ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b SHANDONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Aluminum nitride films; Photoluminescence; Sputtering

Indexed keywords

ALUMINA; ALUMINUM COMPOUNDS; AUGER ELECTRON SPECTROSCOPY; CRYSTAL IMPURITIES; DEFECTS; ELECTROMAGNETIC WAVES; EMISSION SPECTROSCOPY; IMPURITIES; LIGHT; LIGHT EMISSION; LUMINESCENCE; NITRIDES; OXYGEN; PHOTOLUMINESCENCE;

ALN FILMS; ALUMINUM NITRIDE FILMS; BLUE EMISSIONS; BLUE PHOTOLUMINESCENCES; BROAD EMISSION BANDS; CRYSTAL QUALITIES; DEEP ACCEPTORS; DEFECTS AND IMPURITIES; NATIVE DEFECTS; NITROGEN ATMOSPHERES; OXYGEN CONTENTS; OXYGEN IMPURITIES; PHOTOLUMINESCENCE SPECTRUMS; POLYCRYSTAL LINES; POLYCRYSTALLINE ALUMINUMS; SHALLOW DONORS; TWO COMPONENTS; VIOLET BANDS; VIOLET EMISSIONS; X-RAY DIFFRACTIONS;

LEAKAGE (FLUID);

EID: 57049178346     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2008.09.003     Document Type: Article

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