AlGaN/GaN HEMTs on silicon substrate with 206-GHz FMAX

IEEE Electron Device Letters

Volumn 34, Issue 1, 2013, Pages 36-38

  Bouzid Driad, S ^a,b   Maher, H ^a   Defrance, N ^b   Hoel, V ^b   De Jaeger, J C ^b   Renvoise, M ^a   Frijlink, P ^a  

^a OMMIC   (France)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

High electron mobility transistor (HEMT); III N material; maximum oscillation frequency; millimeter wave transistor; silicon substrate

Indexed keywords

100 GHZ; ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; GAN HEMTS; GATE-LENGTH; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); MAXIMUM OSCILLATION FREQUENCY; PARASITIC RESISTANCES; PEAK EXTRINSIC TRANSCONDUCTANCE; SILICON SUBSTRATES; SMALL-SIGNAL MODELING;

CUTOFF FREQUENCY; ELECTRON GAS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; LITHOGRAPHY; SCATTERING PARAMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84871816166     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2224313     Document Type: Article

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