A new small signal model parameter extraction method applied to GaN devices

IEEE MTT-S International Microwave Symposium Digest

Volumn 2005, Issue , 2005, Pages 1423-1426

  Jarndal, A ^a   Kompa, G ^a  

^a UNIVERSITY OF KASSEL   (Germany)

Author keywords

Computer aided analysis; GaN HEMT; Parameter extraction; Semiconductor device modeling

Indexed keywords

COMPUTER AIDED ANALYSIS; EQUIVALENT CIRCUITS; GALLIUM NITRIDE; MATHEMATICAL MODELS; OPTIMIZATION; PARAMETER ESTIMATION;

GAN HEMT; PARAMETER EXTRACTION; SEMICONDUCTOR DEVICE MODELING;

SEMICONDUCTOR DEVICES;

EID: 33749237159     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2005.1516954     Document Type: Conference Paper

References (8)

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