SCOPUS 정보 검색 플랫폼

Volumn 227-230, Issue PART 1, 1998, Pages 197-200

Photoconductive properties of hydrogenated amorphous silicon in the light of the positive dangling bond as the main recombination centre - Consequences from the defect pool model

(2) Bruggemann R a Bauer, G H a

a UNIVERSITY OF OLDENBURG (Germany)

Author keywords

Amorphous silicon; Dangling bonds; Defects; Mobility lifetime product; Photoconductivity; Recombination

Indexed keywords

AMORPHOUS SILICON; CHEMICAL BONDS; CRYSTAL DEFECTS; ELECTRIC CURRENTS; HYDROGENATION; MATHEMATICAL MODELS; NUMERICAL METHODS; PHOTOCONDUCTIVITY; SPECTROSCOPIC ANALYSIS;

PHOTOCURRENT SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0032065063 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(98)00047-7 Document Type: Article

Times cited : (5)

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