Characteristics of metal/p-SnS Schottky barrier with and without post-deposition annealing

Solid State Sciences

Volumn 11, Issue 2, 2009, Pages 461-466

  Ghosh, Biswajit ^a   Das, Madhumita ^a   Banerjee, Pushan ^a   Das, Subrata ^a  

^a JADAVPUR UNIVERSITY   (India)

Author keywords

Annealing; Quasi ohmic; Schottky barrier height; SnS

Indexed keywords

ANNEALING; COPPER; DESULFURIZATION; ELECTRIC CONDUCTIVITY; INDIUM; IONIZATION OF GASES; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILVER; SMELTING; SOLAR POWER GENERATION; THIN FILMS;

ANNEALING CONDITIONS; ANNEALING TEMPERATURES; BREAK DOWN VOLTAGES; CONTACT PARAMETERS; DOPING PROFILES; EDX ANALYSIS; FORWARD BIAS; METAL CONTACTS; PHOTOLUMINESCENCE SPECTRUM; POLY-CRYSTALLINE; POST-DEPOSITION ANNEALING; QUASI-OHMIC; SCHOTTKY BARRIER HEIGHT; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SNS; SNS FILMS; SNS THIN FILMS; SOLAR PHOTOVOLTAIC; SURFACE TRAPS; TOP CONTACTS;

METAL ANALYSIS;

EID: 58949091423     PISSN: 12932558     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solidstatesciences.2008.09.007     Document Type: Article

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