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Volumn 101, Issue 25, 2012, Pages

Photoelectric heat effect induce instability on the negative bias temperature illumination stress for InGaZnO thin film transistors

(9) Huang, Sheng Yao a Chang, Ting Chang a,b Yang, Man Chun a Lin, Li Wei a Wu, Ming Hsin a Yang, Kai Hsiang c Chen, Min Chen a Chiu, Yi Jen a Yeh, Bo Liang d

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

c UNIVERSITY OF TORONTO (Canada)

d Advanced Display Technology Research Center (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; EFFECTS OF ELECTRIC FIELDS; LIGHT ENERGY; MECHANISM OF DEGRADATION; NEGATIVE BIAS; SUBTHRESHOLD SWING; THRESHOLD VOLTAGE SHIFTS;

ELECTRIC FIELDS; PHOTOELECTRICITY; THIN FILMS;

THIN FILM TRANSISTORS;

EID: 84871761186 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4772485 Document Type: Article

Times cited : (15)

References (14)

1
- 77952579176
- 10.1143/JJAP.49.03CB04
- H. Godo, D. Kawae, S. Yoshitomi, T. Sasaki, S. Ito, H. Ohara, H. Kishida, M. Takahashi, A. Miyanaga, and S. Yamazaki, Jpn. J. Appl. Phys. 49, 03CB04 (2010). 10.1143/JJAP.49.03CB04
- (2010) Jpn. J. Appl. Phys. , vol.49
- Godo, H.¹ Kawae, D.² Yoshitomi, S.³ Sasaki, T.⁴ Ito, S.⁵ Ohara, H.⁶ Kishida, H.⁷ Takahashi, M.⁸ Miyanaga, A.⁹ Yamazaki, S.¹⁰

2
- 77953765579
- 10.1063/1.3453870
- C. T. Tsai, T. C. Chang, S. C. Chen, I. Lo, S. W. Tsao, M. C. Hung, J. J. Chang, C. Y. Wu, and C. Y. Huang, Appl. Phys. Lett. 96, 242105 (2010). 10.1063/1.3453870
- (2010) Appl. Phys. Lett. , vol.96 , pp. 242105
- Tsai, C.T.¹ Chang, T.C.² Chen, S.C.³ Lo, I.⁴ Tsao, S.W.⁵ Hung, M.C.⁶ Chang, J.J.⁷ Wu, C.Y.⁸ Huang, C.Y.⁹

3
- 79953780123
- 10.1149/1.3568831
- W. F. Chung, T. C. Chang, H. W. Li, S. C. Chen, Y. C. Chen, T. Y. Tseng, and Y. H. Tai, Electrochem. Solid State Lett. 14 (6), H235-H237 (2011). 10.1149/1.3568831
- (2011) Electrochem. Solid State Lett. , vol.14 , Issue.6
- Chung, W.F.¹ Chang, T.C.² Li, H.W.³ Chen, S.C.⁴ Chen, Y.C.⁵ Tseng, T.Y.⁶ Tai, Y.H.⁷

4
- 85024157921
- 10.1080/15980316.2010.9665845.
- H. H. Hsieh, H. H. Lu, H. C. Ting, C. S. Chuang, C. Y. Chen, and Y. Lin, J. Inf. Disp. 11 (4), 160-164 (2010) 10.1080/15980316.2010.9665845.
- (2010) J. Inf. Disp. , vol.11 , Issue.4 , pp. 160-164
- Hsieh, H.H.¹ Lu, H.H.² Ting, H.C.³ Chuang, C.S.⁴ Chen, C.Y.⁵ Lin, Y.⁶

5
- 29344441251
- 10.1109/JDT.2005.858913
- A. Nathan, G. R. Chaji, and S. J. Ashtiani, J. Disp. Technol. 1, 267 (2005). 10.1109/JDT.2005.858913
- (2005) J. Disp. Technol. , vol.1 , pp. 267
- Nathan, A.¹ Chaji, G.R.² Ashtiani, S.J.³

6
- 84871801190
- 3 passivation layer
- (to be published).
- 3 passivation layer.," Surf. Coat. Technol. (to be published).
- Surf. Coat. Technol.
- Huang, S.Y.¹ Chang, T.C.² Chen, M.C.³ Chen, T.C.⁴ Jian, F.Y.⁵ Chen, Y.C.⁶ Huang, H.C.⁷ Gan, D.S.⁸

7
- 36049015883
- 10.1063/1.2806934
- P. Görrn, M. Lehnhardt, T. Riedl, and W. Kowalsky, Appl. Phys. Lett. 91, 193504 (2007); 10.1063/1.2806934
- (2007) Appl. Phys. Lett. , vol.91 , pp. 193504
- Görrn, P.¹ Lehnhardt, M.² Riedl, T.³ Kowalsky, W.⁴

8
- 84862121689
- 10.1063/1.4722787
- S. Y. Huang, T. C. Chang, L. W. Lin, M. C. Yang, M. C. Chen, J. C. Jhu, and F. Y. Jian, Appl. Phys. Lett. 100, 222901 (2012). 10.1063/1.4722787
- (2012) Appl. Phys. Lett. , vol.100 , pp. 222901
- Huang, S.Y.¹ Chang, T.C.² Lin, L.W.³ Yang, M.C.⁴ Chen, M.C.⁵ Jhu, J.C.⁶ Jian, F.Y.⁷

9
- 79960544590
- 10.1063/1.3609873
- T. C. Chen, T. C. Chang, T. Y. Hsieh, W. S. Lu, F. Y. Jian, C. T. Tsai, S. Y. Huang, and C. S. Lin, Appl. Phys. Lett. 99, 022104 (2011). 10.1063/1.3609873
- (2011) Appl. Phys. Lett. , vol.99 , pp. 022104
- Chen, T.C.¹ Chang, T.C.² Hsieh, T.Y.³ Lu, W.S.⁴ Jian, F.Y.⁵ Tsai, C.T.⁶ Huang, S.Y.⁷ Lin, C.S.⁸

10
- 84860171560
- 10.1149/2.019205esl
- S. Y. Huang, T. C. Chang, M. C. Chen, S. C. Chen, T. C. Chen, and F. Y. Jian, Electrochem. Solid State Lett. 15 (5), H161-H163 (2012). 10.1149/2.019205esl
- (2012) Electrochem. Solid State Lett. , vol.15 , Issue.5
- Huang, S.Y.¹ Chang, T.C.² Chen, M.C.³ Chen, S.C.⁴ Chen, T.C.⁵ Jian, F.Y.⁶

11
- 70350584508
- 10.1109/LED.2009.2031504
- C. S. Lin, Y. C. Chen, T. C. Chang, S. C. Chen, F. Y. Jian, H. W. Li, T. C. Chen, C. F. Weng, J. Lu, and W. C. Hsu, IEEE Electron Device Lett. 30 (11), 1179-1181 (2009). 10.1109/LED.2009.2031504
- (2009) IEEE Electron Device Lett. , vol.30 , Issue.11 , pp. 1179-1181
- Lin, C.S.¹ Chen, Y.C.² Chang, T.C.³ Chen, S.C.⁴ Jian, F.Y.⁵ Li, H.W.⁶ Chen, T.C.⁷ Weng, C.F.⁸ Lu, J.⁹ Hsu, W.C.¹⁰

12
- 84859185388
- 10.1109/LED.2012.2182754.
- G. W. Chang, T. C. Chang, J. C. Jhu, T. M. Tsai, Y. E. Syu, K. C. Chang, Y. H. Tai, F. Y. Jian, and Y. C. Hung, IEEE Electron Device Lett. 33 (4), 540-542 (2012) 10.1109/LED.2012.2182754.
- (2012) IEEE Electron Device Lett. , vol.33 , Issue.4 , pp. 540-542
- Chang, G.W.¹ Chang, T.C.² Jhu, J.C.³ Tsai, T.M.⁴ Syu, Y.E.⁵ Chang, K.C.⁶ Tai, Y.H.⁷ Jian, F.Y.⁸ Hung, Y.C.⁹

13
- 67650492747
- 10.1063/1.3167816
- Y. K. Moon, S. Lee, W. S. Kim, B. W. Kang, C. O. Jeong, D. H. Lee, and J. W. Park, Appl. Phys. Lett. 95, 013507 (2009). 10.1063/1.3167816
- (2009) Appl. Phys. Lett. , vol.95 , pp. 013507
- Moon, Y.K.¹ Lee, S.² Kim, W.S.³ Kang, B.W.⁴ Jeong, C.O.⁵ Lee, D.H.⁶ Park, J.W.⁷

14
- 34247891689
- 10.1016/j.microrel.2006.10.006
- D. K. Schroder, Microelectron. Reliab. 47, 841-852 (2007). 10.1016/j.microrel.2006.10.006
- (2007) Microelectron. Reliab. , vol.47 , pp. 841-852
- Schroder, D.K.¹

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