Temperature dependence of transistor characteristics and electronic structure for amorphous In-Ga-Zn-Oxide thin film transistor

Japanese Journal of Applied Physics

Volumn 49, Issue 3 PART 2, 2010, Pages

  Godo, Hiromichi ^a   Kawae, Daisuke ^a   Yoshitomi, Shuhei ^a   Sasaki, Toshinari ^a   Ito, Shunichi ^a   Ohara, Hiroki ^a   Kishida, Hideyuki ^a   Takahashi, Masahiro ^a   Miyanaga, Akiharu ^a   Yamazaki, Shunpei ^a  

^a SEMICONDUCTOR ENERGY LABORATORY CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO MOLECULAR DYNAMICS; CARRIER GENERATION; HYDROGEN DOPING; MEASURED RESULTS; NUMERICAL SIMULATION; OXIDE THIN FILMS; OXYGEN DEFICIENCY; TEMPERATURE DEPENDENCE; TRANSISTOR CHARACTERISTICS;

AMORPHOUS FILMS; COMPUTER SIMULATION; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GALLIUM; MOLECULAR DYNAMICS; MOLECULAR OXYGEN; TEMPERATURE DISTRIBUTION; THIN FILMS; ZINC;

THIN FILM TRANSISTORS;

EID: 77952579176     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.03CB04     Document Type: Article

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