Even-odd symmetry and the conversion efficiency of ideal and practical graphene transistor frequency multipliers

Applied Physics Letters

Volumn 99, Issue 22, 2011, Pages

  Parrish, Kristen N ^a   Akinwande, Deji ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON HOLE SYMMETRY; EVEN-HARMONIC; FREQUENCY MULTIPLIER; GATE CAPACITANCE; GRAPHENE TRANSISTORS; IMPURITY DENSITY; LARGE POWER; LINEAR CHARGES; NEAR-LOSSLESS; NON-IDEALITIES; QUANTUM CAPACITANCE; SYMMETRY CONSIDERATION;

CAPACITANCE; CONVERSION EFFICIENCY; EFFICIENCY; FIELD EFFECT TRANSISTORS; GRAPHENE;

TRANSISTORS;

EID: 82955213621     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3664112     Document Type: Article

References (18)

1. E. Seok, D. Shim, C. Mao, R. Han, S. Sankaran, C. Cao, W. Knap, and K. O. Kenneth, IEEE J. Solid-State Circuits 45 (8), 1554 (2010). 10.1109/JSSC.2010. 2049793
2. A. Scavennec, M. Sokolich, and Y. Baeyens, IEEE Microw. Mag. 10 (2), 77 (2009). 10.1109/MMM.2008.931712
3. I. J. Bahl and P. Bhartia, Microwave Solid State Circuit Design, II ed. (Wiley, New York, 2003).
4. J. Chauhan and J. Guo, Nano Res. 4 (6), 571 (2011). 10.1007/s12274-011- 0113-1
5. F. Schwierz, Nat. Nanotechnol. 5 (7), 487 (2010). 10.1038/nnano.2010.89
6. H. Wang, A. Hsu, K. K. Kim, J. Kong, and T. Palacios, Gigahertz ambipolar frequency multiplier based on CVD graphene, 2010 IEEE International Electron Devices Meeting (IEEE, San Francisco, 2010), pp 23.6.1-23.6.4
7. Z. Wang, Z. Zhang, H. Xu, L. Ding, S. Wang, and L.-M. Peng, Appl. Phys. Lett. 96 (17), 173104 (2010). 10.1063/1.3413959
8. Y.-M. Lin, C. Dimitrakopoulos, K. A. Jenkins, D. B. Farmer, H.-Y. Chiu, A. Grill, and P. Avouris, Science 327 (5966), 662 (2010). 10.1126/science. 1184289
9. L. Liao, Y.-C. Lin, M. Bao, R. Cheng, J. Bai, Y. Liu, Y. Qu, K. L. Wang, Y. Huang, and X. Duan, Nature 467 (7313), 305 (2010). 10.1038/nature09405
10. M. Dragoman, D. Neculoiu, G. Deligeorgis, G. Konstantinidis, D. Dragoman, A. Cismaru, A. A. Muller, and R. Plana, Appl. Phys. Lett. 97 (9), 093101 (2010). 10.1063/1.3483872
11. S. Kim, J. Nah, I. Jo, D. Shahrjerdi, L. Colombo, Z. Yao, E. Tutuc, and S. K. Banerjee, Appl. Phys. Lett. 94 (6), 062107 (2009). 10.1063/1.3077021
12. M. E. Ramn, A. Gupta, C. Corbet, D. A. Ferrer, H. C. P. Movva, G. Carpenter, L. Colombo, G. Bourianoff, M. Doczy, D. Akinwande, E. Tutuc, and S. K. Banerjee, ACS Nano 5, 7198 (2011). 10.1021/nn202012m
13. S. Kim, K. Lee, and E. Tutuc, Phys. Rev. Lett. 107 (1), 016803 (2011). 10.1103/PhysRevLett.107.016803
14. K. N. Parrish and D. Akinwande, Appl. Phys. Lett. 98 (18), 183505 (2011). 10.1063/1.3582613
15. S. A. Thiele, J. A. Schaefer, and F. Schwierz, J. Appl. Phys. 107 (9), 094505 (2010). 10.1063/1.3357398
16. I. Meric, M. Y. Han, A. F. Young, B. Ozyilmaz, P. Kim, and K. L. Shepard, Nat. Nanotechnol. 3 (11), 654 (2008). 10.1038/nnano.2008.268
17. E. Monaco, M. Pozzoni, F. Svelto, and A. Mazzanti, IEEE J. Solid-State Circuits 45 (8), 1565 (2010). 10.1109/JSSC.2010.2049780
18. M. Abbasi, R. Kozhuharov, C. Karnfelt, I. Angelov, I. Kallfass, A. Leuther, and H. Zirath, IEEE Trans. Microwave Theory Tech. 57 (12), 3134 (2009). 10.1109/TMTT.2009.2034344